Dual N-Channel MOSFET, 6 A, 20 V, 8-Pin PowerPAK 1212-8 Vishay SI7900AEDN-T1-GE3

RS Stock No.:: 165-6339
Mfr. Part No.:: SI7900AEDN-T1-GE3
Brand:: Vishay

Dual N-Channel MOSFET, 6 A, 20 V, 8-Pin PowerPAK 1212-8 Vishay SI7900AEDN-T1-GE3

Available to back order for despatch 21/11/2024

Price Each (On a Reel of 3000)

£0.406

(exc. VAT)

£0.487

(inc. VAT)

Units	Per unit	Per Reel*
3000 +	£0.406	£1,218.00

*price indicative

RS Stock No.:: 165-6339
Mfr. Part No.:: SI7900AEDN-T1-GE3
Brand:: Vishay

Si7900AEDN, Dual N-Channel 20V (D-S) MOSFET, Common Drain
ESD Control Selection Guide V1

Attribute	Value
Channel Type	N
Maximum Continuous Drain Current	6 A
Maximum Drain Source Voltage	20 V
Package Type	PowerPAK 1212-8
Mounting Type	Surface Mount
Pin Count	8
Maximum Drain Source Resistance	36 mΩ
Channel Mode	Enhancement
Minimum Gate Threshold Voltage	0.4V
Maximum Power Dissipation	1.5 W
Transistor Configuration	Common Drain
Maximum Gate Source Voltage	-12 V, +12 V
Width	3.15mm
Maximum Operating Temperature	+150 °C
Length	3.15mm
Number of Elements per Chip	2
Typical Gate Charge @ Vgs	10.5 nC @ 4.5 V
Transistor Material	Si
Height	1.07mm
Minimum Operating Temperature	-55 °C

Dual N-Channel MOSFET, 6 A, 20 V, 8-Pin PowerPAK 1212-8 Vishay SI7900AEDN-T1-GE3

Dual N-Channel MOSFET, Vishay Semiconductor

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