N-Channel MOSFET, 70 A, 30 V, 3-Pin DPAK Infineon IPD70N03S4L04ATMA1

Subtotal (1 reel of 2500 units)*

£710.00

(exc. VAT)

£852.50

(inc. VAT)

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Units
Per unit
Per Reel*
2500 +£0.284£710.00

*price indicative

RS Stock No.:
165-5946
Mfr. Part No.:
IPD70N03S4L04ATMA1
Brand:
Infineon
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Brand

Infineon

Channel Type

N

Maximum Continuous Drain Current

70 A

Maximum Drain Source Voltage

30 V

Package Type

DPAK (TO-252)

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

5.7 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2.2V

Minimum Gate Threshold Voltage

1V

Maximum Power Dissipation

68 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-16 V, +16 V

Typical Gate Charge @ Vgs

37 nC @ 10 V

Length

6.5mm

Transistor Material

Si

Number of Elements per Chip

1

Width

6.22mm

Maximum Operating Temperature

+175 °C

Series

OptiMOS T2

Minimum Operating Temperature

-55 °C

Height

2.3mm

RoHS Status: Exempt

COO (Country of Origin):
CN
The Infineon automotive power MOSFET has superior quality and reliability. It has optimized total gate charge which enables smaller driver output stages. It has low switching and conduction power losses for highest thermal efficiency.

Automotive AEC Q101 qualified

MSL1 up to 260 degree C peak reflow

175 degree C operating temperature

Green Package