Dual N-Channel MOSFET, 5.2 A, 20 V, 8-Pin SOIC Infineon IRF7301TRPBF

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We don’t know if this item will be back in stock, it is being discontinued by the manufacturer.
RS Stock No.:
165-5934
Mfr. Part No.:
IRF7301TRPBF
Brand:
Infineon
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Brand

Infineon

Channel Type

N

Maximum Continuous Drain Current

5.2 A

Maximum Drain Source Voltage

20 V

Package Type

SOIC

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

70 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

0.7V

Minimum Gate Threshold Voltage

0.7V

Maximum Power Dissipation

2 W

Transistor Configuration

Isolated

Maximum Gate Source Voltage

-12 V, +12 V

Length

5mm

Transistor Material

Si

Maximum Operating Temperature

+150 °C

Number of Elements per Chip

2

Width

4mm

Typical Gate Charge @ Vgs

20 nC @ 4.5 V

Minimum Operating Temperature

-55 °C

Series

HEXFET

Height

1.5mm

COO (Country of Origin):
MY

N-Channel Power MOSFET 12V to 25V, Infineon


Infineon's range of discrete HEXFET® power MOSFETs includes N-channel devices in surface mount and leaded packages and form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.


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