Infineon HEXFET N-Channel MOSFET, 31 A, 200 V, 3-Pin D2PAK IRFS31N20DTRLP

RS Stock No.:
165-5914
Mfr. Part No.:
IRFS31N20DTRLP
Brand:
Infineon
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Brand

Infineon

Channel Type

N

Maximum Continuous Drain Current

31 A

Maximum Drain Source Voltage

200 V

Series

HEXFET

Package Type

D2PAK (TO-263)

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

82 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

5.5V

Minimum Gate Threshold Voltage

3V

Maximum Power Dissipation

200 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-30 V, +30 V

Length

10.67mm

Typical Gate Charge @ Vgs

70 nC @ 10 V

Width

9.65mm

Maximum Operating Temperature

+175 °C

Transistor Material

Si

Number of Elements per Chip

1

Height

4.83mm

Minimum Operating Temperature

-55 °C

COO (Country of Origin):
CN

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