N-Channel MOSFET, 21 A, 150 V, 3-Pin D2PAK Infineon IRF3315STRLPBF

Unavailable
RS will no longer stock this product.
RS Stock No.:
165-5888
Mfr. Part No.:
IRF3315STRLPBF
Brand:
Infineon
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Brand

Infineon

Channel Type

N

Maximum Continuous Drain Current

21 A

Maximum Drain Source Voltage

150 V

Package Type

D2PAK (TO-263)

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

82 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4V

Minimum Gate Threshold Voltage

2V

Maximum Power Dissipation

94 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Length

10.67mm

Width

9.65mm

Typical Gate Charge @ Vgs

95 nC @ 10 V

Maximum Operating Temperature

+175 °C

Transistor Material

Si

Number of Elements per Chip

1

Minimum Operating Temperature

-55 °C

Height

4.83mm

Series

HEXFET

COO (Country of Origin):
CN

N-Channel Power MOSFET 150V to 600V, Infineon


Infineon's range of discrete HEXFET® power MOSFETs includes N-channel devices in surface mount and leaded packages and form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.


MOSFET Transistors, Infineon


Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.