N-Channel MOSFET, 2.3 A, 30 V, 3-Pin SOT-23 Infineon BSS306NH6327XTSA1

Brand

Infineon

Channel Type

N

Maximum Continuous Drain Current

2.3 A

Maximum Drain Source Voltage

30 V

Package Type

SOT-23

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

93 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2V

Minimum Gate Threshold Voltage

1.2V

Maximum Power Dissipation

500 mW

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Typical Gate Charge @ Vgs

1.5 nC @ 5 V

Length

2.9mm

Transistor Material

Si

Maximum Operating Temperature

+150 °C

Number of Elements per Chip

1

Width

1.3mm

Minimum Operating Temperature

-55 °C

Series

OptiMOS 2

Height

1mm