N-Channel MOSFET, 5 A, 250 V, 8-Pin TSDSON Infineon BSZ42DN25NS3GATMA1
- RS Stock No.:
- 165-5753
- Mfr. Part No.:
- BSZ42DN25NS3GATMA1
- Brand:
- Infineon
Subtotal (1 reel of 5000 units)*
£2,575.00
(exc. VAT)
£3,090.00
(inc. VAT)
Stock information currently inaccessible - Please check back later
Units | Per unit | Per Reel* |
|---|---|---|
| 5000 + | £0.515 | £2,575.00 |
*price indicative
- RS Stock No.:
- 165-5753
- Mfr. Part No.:
- BSZ42DN25NS3GATMA1
- Brand:
- Infineon
Specifications
Technical Reference
Legislation and Compliance
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 5 A | |
| Maximum Drain Source Voltage | 250 V | |
| Package Type | TSDSON | |
| Mounting Type | Surface Mount | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance | 425 mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Threshold Voltage | 4V | |
| Minimum Gate Threshold Voltage | 2V | |
| Maximum Power Dissipation | 33.8 W | |
| Transistor Configuration | Single | |
| Maximum Gate Source Voltage | -20 V, +20 V | |
| Typical Gate Charge @ Vgs | 4.2 nC @ 10 V | |
| Length | 3.4mm | |
| Maximum Operating Temperature | +150 °C | |
| Transistor Material | Si | |
| Number of Elements per Chip | 1 | |
| Width | 3.4mm | |
| Height | 1.1mm | |
| Minimum Operating Temperature | -55 °C | |
| Series | OptiMOS 3 | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type N | ||
Maximum Continuous Drain Current 5 A | ||
Maximum Drain Source Voltage 250 V | ||
Package Type TSDSON | ||
Mounting Type Surface Mount | ||
Pin Count 8 | ||
Maximum Drain Source Resistance 425 mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 4V | ||
Minimum Gate Threshold Voltage 2V | ||
Maximum Power Dissipation 33.8 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage -20 V, +20 V | ||
Typical Gate Charge @ Vgs 4.2 nC @ 10 V | ||
Length 3.4mm | ||
Maximum Operating Temperature +150 °C | ||
Transistor Material Si | ||
Number of Elements per Chip 1 | ||
Width 3.4mm | ||
Height 1.1mm | ||
Minimum Operating Temperature -55 °C | ||
Series OptiMOS 3 | ||
- COO (Country of Origin):
- MY