N-Channel MOSFET, 50 A, 60 V, 3-Pin D2PAK Infineon IPB090N06N3GATMA1

Subtotal (1 reel of 1000 units)*

£353.00

(exc. VAT)

£424.00

(inc. VAT)

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Units
Per unit
Per Reel*
1000 +£0.353£353.00

*price indicative

RS Stock No.:
165-5706
Mfr. Part No.:
IPB090N06N3GATMA1
Brand:
Infineon
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Brand

Infineon

Channel Type

N

Maximum Continuous Drain Current

50 A

Maximum Drain Source Voltage

60 V

Package Type

D2PAK (TO-263)

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

9 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4V

Minimum Gate Threshold Voltage

2V

Maximum Power Dissipation

71 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Typical Gate Charge @ Vgs

36 nC @ 10 V

Length

10.31mm

Transistor Material

Si

Maximum Operating Temperature

+175 °C

Number of Elements per Chip

1

Width

9.45mm

Height

4.57mm

Series

OptiMOS 3

Minimum Operating Temperature

-55 °C

COO (Country of Origin):
CN