Infineon OptiMOS T2 N-Channel MOSFET, 80 A, 60 V, 3-Pin D2PAK IPB80N06S4L07ATMA2

Stock information currently inaccessible
RS Stock No.:
165-5701
Mfr. Part No.:
IPB80N06S4L07ATMA2
Brand:
Infineon
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Brand

Infineon

Channel Type

N

Maximum Continuous Drain Current

80 A

Maximum Drain Source Voltage

60 V

Series

OptiMOS T2

Package Type

D2PAK (TO-263)

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

11.3 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2V

Minimum Gate Threshold Voltage

1.2V

Maximum Power Dissipation

79 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-16 V, +16 V

Length

10mm

Maximum Operating Temperature

+175 °C

Transistor Material

Si

Width

9.25mm

Number of Elements per Chip

1

Typical Gate Charge @ Vgs

58 nC @ 10 V

Height

4.4mm

Minimum Operating Temperature

-55 °C

RoHS Status: Exempt

COO (Country of Origin):
CN

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