N-Channel MOSFET, 39 A, 80 V, 3-Pin DPAK Infineon IRLR2908TRLPBF

Brand

Infineon

Channel Type

N

Maximum Continuous Drain Current

39 A

Maximum Drain Source Voltage

80 V

Package Type

DPAK (TO-252)

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

30 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2.5V

Minimum Gate Threshold Voltage

1V

Maximum Power Dissipation

120 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-16 V, +16 V

Typical Gate Charge @ Vgs

22 nC @ 4.5 V

Transistor Material

Si

Maximum Operating Temperature

+175 °C

Length

6.73mm

Number of Elements per Chip

1

Width

6.22mm

Minimum Operating Temperature

-55 °C

Height

2.39mm

Series

HEXFET