Infineon HEXFET Dual N/P-Channel MOSFET, 4.6 A, 6.8 A, 30 V, 8-Pin SOIC IRF9389TRPBF

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RS Stock No.:
165-5525
Mfr. Part No.:
IRF9389TRPBF
Brand:
Infineon
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Brand

Infineon

Channel Type

N, P

Maximum Continuous Drain Current

4.6 A, 6.8 A

Maximum Drain Source Voltage

30 V

Package Type

SOIC

Series

HEXFET

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

40 mΩ, 103 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2.3V

Minimum Gate Threshold Voltage

1.3V

Maximum Power Dissipation

2 W

Transistor Configuration

Isolated

Maximum Gate Source Voltage

-20 V, +20 V

Maximum Operating Temperature

+150 °C

Length

5mm

Typical Gate Charge @ Vgs

6.8 nC @ 10 V, 8.1 nC @ 10 V

Transistor Material

Si

Width

4mm

Number of Elements per Chip

2

Height

1.5mm

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

1.2V

COO (Country of Origin):
CN

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