N-Channel MOSFET, 31 A, 200 V, 3-Pin TO-220AB Infineon IRFB31N20DPBF

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RS Stock No.:
165-5448
Mfr. Part No.:
IRFB31N20DPBF
Brand:
Infineon
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Brand

Infineon

Channel Type

N

Maximum Continuous Drain Current

31 A

Maximum Drain Source Voltage

200 V

Package Type

TO-220AB

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

82 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

5.5V

Minimum Gate Threshold Voltage

3V

Maximum Power Dissipation

200 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-30 V, +30 V

Width

4.69mm

Maximum Operating Temperature

+175 °C

Typical Gate Charge @ Vgs

70 nC @ 10 V

Transistor Material

Si

Number of Elements per Chip

1

Length

10.54mm

Height

15.24mm

Series

HEXFET

Minimum Operating Temperature

-55 °C

COO (Country of Origin):
PH

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Infineon's range of discrete HEXFET® power MOSFETs includes N-channel devices in surface mount and leaded packages and form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.


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