Infineon OptiMOS N-Channel MOSFET, 80 A, 55 V, 3-Pin TO-220 IPP80N06S207AKSA1

Brand

Infineon

Channel Type

N

Maximum Continuous Drain Current

80 A

Maximum Drain Source Voltage

55 V

Package Type

TO-220

Series

OptiMOS

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

6.6 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4V

Minimum Gate Threshold Voltage

2.1V

Maximum Power Dissipation

250 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Width

4.4mm

Number of Elements per Chip

1

Length

10mm

Maximum Operating Temperature

+175 °C

Transistor Material

Si

Typical Gate Charge @ Vgs

86 nC @ 10 V

Minimum Operating Temperature

-55 °C

Height

15.65mm