N-Channel MOSFET, 2.3 A, 500 V, 3-Pin TO220AB STMicroelectronics STP3NK50Z
- RS Stock No.:
- 165-3242
- Mfr. Part No.:
- STP3NK50Z
- Brand:
- STMicroelectronics
Stock information currently inaccessible
- RS Stock No.:
- 165-3242
- Mfr. Part No.:
- STP3NK50Z
- Brand:
- STMicroelectronics
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | STMicroelectronics | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 2.3 A | |
| Maximum Drain Source Voltage | 500 V | |
| Package Type | TO220AB | |
| Mounting Type | Surface Mount | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance | 3.3 Ω | |
| Channel Mode | Enhancement | |
| Maximum Gate Threshold Voltage | 4.5V | |
| Minimum Gate Threshold Voltage | 3V | |
| Maximum Power Dissipation | 45 W | |
| Transistor Configuration | Single | |
| Maximum Gate Source Voltage | ±30 V | |
| Number of Elements per Chip | 1 | |
| Maximum Operating Temperature | +150 °C | |
| Length | 10.4mm | |
| Typical Gate Charge @ Vgs | 11 nC @ 10 V | |
| Width | 4.6mm | |
| Minimum Operating Temperature | -55 °C | |
| Height | 15.75mm | |
| Forward Diode Voltage | 1.6V | |
| Select all | ||
|---|---|---|
Brand STMicroelectronics | ||
Channel Type N | ||
Maximum Continuous Drain Current 2.3 A | ||
Maximum Drain Source Voltage 500 V | ||
Package Type TO220AB | ||
Mounting Type Surface Mount | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 3.3 Ω | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 4.5V | ||
Minimum Gate Threshold Voltage 3V | ||
Maximum Power Dissipation 45 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage ±30 V | ||
Number of Elements per Chip 1 | ||
Maximum Operating Temperature +150 °C | ||
Length 10.4mm | ||
Typical Gate Charge @ Vgs 11 nC @ 10 V | ||
Width 4.6mm | ||
Minimum Operating Temperature -55 °C | ||
Height 15.75mm | ||
Forward Diode Voltage 1.6V | ||
The M2 series of super-junction MOSFETs has been extended with the introduction of 650 V devices ensuring a higher safety margin for more robust and reliable applications. The low on-resistance (down to 0.36Ω in the TO-220 package) combined with low gate charge and input/output capacitances enable highly-efficient adapters, solar micro-inverters and lighting applications.
This device is an N-channel Zener-protected Power MOSFET developed using STMicroelectronics' SuperMESH™ technology, achieved through optimization of ST's well established strip-based PowerMESH™ layout. In addition to a significant reduction in on-resistance, this device is designed to ensure a high level of dv/dt capability for the most demanding applications.
Extremely high dv/dt capability
ESD improved capability
100% avalanche tested
Gate charge minimized
Zener-protected
ESD improved capability
100% avalanche tested
Gate charge minimized
Zener-protected