Vishay Dual N-Channel MOSFET, 4.3 A, 60 V, 8-Pin SOIC SI4900DY-T1-GE3
- RS Stock No.:
- 165-3003
- Mfr. Part No.:
- SI4900DY-T1-GE3
- Brand:
- Vishay
Stock information currently inaccessible
- RS Stock No.:
- 165-3003
- Mfr. Part No.:
- SI4900DY-T1-GE3
- Brand:
- Vishay
Specifications
Technical Reference
Legislation and Compliance
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Vishay | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 4.3 A | |
| Maximum Drain Source Voltage | 60 V | |
| Package Type | SOIC | |
| Mounting Type | Surface Mount | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance | 58 mΩ | |
| Channel Mode | Enhancement | |
| Minimum Gate Threshold Voltage | 1V | |
| Maximum Power Dissipation | 2 W | |
| Transistor Configuration | Isolated | |
| Maximum Gate Source Voltage | -20 V, +20 V | |
| Length | 5mm | |
| Number of Elements per Chip | 2 | |
| Width | 4mm | |
| Transistor Material | Si | |
| Maximum Operating Temperature | +150 °C | |
| Typical Gate Charge @ Vgs | 13 nC @ 10 V | |
| Height | 1.55mm | |
| Minimum Operating Temperature | -55 °C | |
| Select all | ||
|---|---|---|
Brand Vishay | ||
Channel Type N | ||
Maximum Continuous Drain Current 4.3 A | ||
Maximum Drain Source Voltage 60 V | ||
Package Type SOIC | ||
Mounting Type Surface Mount | ||
Pin Count 8 | ||
Maximum Drain Source Resistance 58 mΩ | ||
Channel Mode Enhancement | ||
Minimum Gate Threshold Voltage 1V | ||
Maximum Power Dissipation 2 W | ||
Transistor Configuration Isolated | ||
Maximum Gate Source Voltage -20 V, +20 V | ||
Length 5mm | ||
Number of Elements per Chip 2 | ||
Width 4mm | ||
Transistor Material Si | ||
Maximum Operating Temperature +150 °C | ||
Typical Gate Charge @ Vgs 13 nC @ 10 V | ||
Height 1.55mm | ||
Minimum Operating Temperature -55 °C | ||
- COO (Country of Origin):
- TW