Vishay N-Channel MOSFET, 19 A, 30 V, 8-Pin PowerPAK SO-8 SIR462DP-T1-GE3
- RS Stock No.:
- 165-2723
- Mfr. Part No.:
- SIR462DP-T1-GE3
- Brand:
- Vishay
Subtotal (1 reel of 3000 units)*
£1,116.00
(exc. VAT)
£1,338.00
(inc. VAT)
FREE delivery for orders over £50.00
Temporarily out of stock
- Shipping from 29 January 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Reel* |
|---|---|---|
| 3000 + | £0.372 | £1,116.00 |
*price indicative
- RS Stock No.:
- 165-2723
- Mfr. Part No.:
- SIR462DP-T1-GE3
- Brand:
- Vishay
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Vishay | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 19 A | |
| Maximum Drain Source Voltage | 30 V | |
| Package Type | PowerPAK SO-8 | |
| Mounting Type | Surface Mount | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance | 8 mΩ | |
| Channel Mode | Enhancement | |
| Minimum Gate Threshold Voltage | 1V | |
| Maximum Power Dissipation | 4.8 W | |
| Transistor Configuration | Single | |
| Maximum Gate Source Voltage | -20 V, +20 V | |
| Typical Gate Charge @ Vgs | 20 nC @ 10 V, 8.8 nC @ 4.5 V | |
| Length | 4.9mm | |
| Number of Elements per Chip | 1 | |
| Width | 5.89mm | |
| Maximum Operating Temperature | +150 °C | |
| Transistor Material | Si | |
| Minimum Operating Temperature | -55 °C | |
| Height | 1.04mm | |
Select all | ||
|---|---|---|
Brand Vishay | ||
Channel Type N | ||
Maximum Continuous Drain Current 19 A | ||
Maximum Drain Source Voltage 30 V | ||
Package Type PowerPAK SO-8 | ||
Mounting Type Surface Mount | ||
Pin Count 8 | ||
Maximum Drain Source Resistance 8 mΩ | ||
Channel Mode Enhancement | ||
Minimum Gate Threshold Voltage 1V | ||
Maximum Power Dissipation 4.8 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage -20 V, +20 V | ||
Typical Gate Charge @ Vgs 20 nC @ 10 V, 8.8 nC @ 4.5 V | ||
Length 4.9mm | ||
Number of Elements per Chip 1 | ||
Width 5.89mm | ||
Maximum Operating Temperature +150 °C | ||
Transistor Material Si | ||
Minimum Operating Temperature -55 °C | ||
Height 1.04mm | ||
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