STMicroelectronics STI28 N-Channel MOSFET, 22 A, 650 V, 3-Pin D2PAK STI28N60M2
- RS Stock No.:
- 164-6985P
- Mfr. Part No.:
- STI28N60M2
- Brand:
- STMicroelectronics
Bulk discount available
Subtotal 10 units (supplied in a tube)*
£21.65
(exc. VAT)
£25.98
(inc. VAT)
FREE delivery for orders over £50.00
Temporarily out of stock
- Shipping from 11 March 2026
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Units | Per unit |
|---|---|
| 10 - 18 | £2.165 |
| 20 - 48 | £2.10 |
| 50 - 98 | £2.045 |
| 100 + | £2.00 |
*price indicative
- RS Stock No.:
- 164-6985P
- Mfr. Part No.:
- STI28N60M2
- Brand:
- STMicroelectronics
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | STMicroelectronics | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 22 A | |
| Maximum Drain Source Voltage | 650 V | |
| Series | STI28 | |
| Package Type | D2PAK (TO-263) | |
| Mounting Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance | 150 mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Threshold Voltage | 4V | |
| Minimum Gate Threshold Voltage | 2V | |
| Maximum Power Dissipation | 170 W | |
| Transistor Configuration | Single | |
| Maximum Gate Source Voltage | +25 V | |
| Width | 4.6mm | |
| Length | 10.4mm | |
| Number of Elements per Chip | 1 | |
| Typical Gate Charge @ Vgs | 36 nC @ 10 V | |
| Maximum Operating Temperature | +150 °C | |
| Forward Diode Voltage | 1.6V | |
| Minimum Operating Temperature | -55 °C | |
| Height | 9.3mm | |
| Select all | ||
|---|---|---|
Brand STMicroelectronics | ||
Channel Type N | ||
Maximum Continuous Drain Current 22 A | ||
Maximum Drain Source Voltage 650 V | ||
Series STI28 | ||
Package Type D2PAK (TO-263) | ||
Mounting Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 150 mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 4V | ||
Minimum Gate Threshold Voltage 2V | ||
Maximum Power Dissipation 170 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage +25 V | ||
Width 4.6mm | ||
Length 10.4mm | ||
Number of Elements per Chip 1 | ||
Typical Gate Charge @ Vgs 36 nC @ 10 V | ||
Maximum Operating Temperature +150 °C | ||
Forward Diode Voltage 1.6V | ||
Minimum Operating Temperature -55 °C | ||
Height 9.3mm | ||
These devices are N-channel Power MOSFETs developed using MDmesh™ M2 technology. Thanks to their strip layout and improved vertical structure, these devices exhibit low on-resistance and optimized switching characteristics, rendering them suitable for the most demanding high efficiency converters.
Extremely low gate charge
Excellent output capacitance (COSS ) profile
100% avalanche tested
Zener-protected
Extremely low Qg for increased efficiency
Optimized gate charge and capacitance profiles for resonant power supplies (LLC converters)
Excellent output capacitance (COSS ) profile
100% avalanche tested
Zener-protected
Extremely low Qg for increased efficiency
Optimized gate charge and capacitance profiles for resonant power supplies (LLC converters)