onsemi N-Channel MOSFET, 20 A, 30 V, 3-Pin DPAK NTD20N03L27T4G
- RS Stock No.:
- 163-2293
- Mfr. Part No.:
- NTD20N03L27T4G
- Brand:
- onsemi
Subtotal (1 reel of 2500 units)*
£1,030.00
(exc. VAT)
£1,235.00
(inc. VAT)
FREE delivery for orders over £50.00
In Stock
- 2,500 unit(s) ready to ship
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Reel* |
|---|---|---|
| 2500 + | £0.412 | £1,030.00 |
*price indicative
- RS Stock No.:
- 163-2293
- Mfr. Part No.:
- NTD20N03L27T4G
- Brand:
- onsemi
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | onsemi | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 20 A | |
| Maximum Drain Source Voltage | 30 V | |
| Package Type | DPAK (TO-252) | |
| Mounting Type | Surface Mount | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance | 31 mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Threshold Voltage | 2V | |
| Maximum Power Dissipation | 74 W | |
| Transistor Configuration | Single | |
| Maximum Gate Source Voltage | -24 V, +24 V | |
| Width | 6.22mm | |
| Number of Elements per Chip | 1 | |
| Maximum Operating Temperature | +150 °C | |
| Length | 6.73mm | |
| Typical Gate Charge @ Vgs | 18.9 nC @ 10 V dc | |
| Transistor Material | Si | |
| Height | 2.38mm | |
| Minimum Operating Temperature | -55 °C | |
Select all | ||
|---|---|---|
Brand onsemi | ||
Channel Type N | ||
Maximum Continuous Drain Current 20 A | ||
Maximum Drain Source Voltage 30 V | ||
Package Type DPAK (TO-252) | ||
Mounting Type Surface Mount | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 31 mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 2V | ||
Maximum Power Dissipation 74 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage -24 V, +24 V | ||
Width 6.22mm | ||
Number of Elements per Chip 1 | ||
Maximum Operating Temperature +150 °C | ||
Length 6.73mm | ||
Typical Gate Charge @ Vgs 18.9 nC @ 10 V dc | ||
Transistor Material Si | ||
Height 2.38mm | ||
Minimum Operating Temperature -55 °C | ||
- COO (Country of Origin):
- MY
N-Channel Power MOSFET, 30V, ON Semiconductor
MOSFET Transistors, ON Semiconductor
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