Dual N/P-Channel MOSFET, 450 mA, 570 mA, 20 V, 6-Pin SOT-563 onsemi NTZD3155CG
- RS Stock No.:
- 163-1145
- Mfr. Part No.:
- NTZD3155CT1G
- Brand:
- ON Semiconductor
Discontinued
- RS Stock No.:
- 163-1145
- Mfr. Part No.:
- NTZD3155CT1G
- Brand:
- ON Semiconductor
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | ON Semiconductor | |
| Channel Type | N, P | |
| Maximum Continuous Drain Current | 450 mA, 570 mA | |
| Maximum Drain Source Voltage | 20 V | |
| Package Type | SOT-563 | |
| Mounting Type | Surface Mount | |
| Pin Count | 6 | |
| Maximum Drain Source Resistance | 2 Ω, 900 mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Threshold Voltage | 1V | |
| Maximum Power Dissipation | 280 mW | |
| Transistor Configuration | Isolated | |
| Maximum Gate Source Voltage | -6 V, +6 V | |
| Length | 1.7mm | |
| Transistor Material | Si | |
| Width | 1.3mm | |
| Maximum Operating Temperature | +150 °C | |
| Number of Elements per Chip | 2 | |
| Typical Gate Charge @ Vgs | 0.1 nC @ 4.5 V, 1.5 nC @ 4.5 V | |
| Minimum Operating Temperature | -55 °C | |
| Height | 0.6mm | |
| Select all | ||
|---|---|---|
Brand ON Semiconductor | ||
Channel Type N, P | ||
Maximum Continuous Drain Current 450 mA, 570 mA | ||
Maximum Drain Source Voltage 20 V | ||
Package Type SOT-563 | ||
Mounting Type Surface Mount | ||
Pin Count 6 | ||
Maximum Drain Source Resistance 2 Ω, 900 mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 1V | ||
Maximum Power Dissipation 280 mW | ||
Transistor Configuration Isolated | ||
Maximum Gate Source Voltage -6 V, +6 V | ||
Length 1.7mm | ||
Transistor Material Si | ||
Width 1.3mm | ||
Maximum Operating Temperature +150 °C | ||
Number of Elements per Chip 2 | ||
Typical Gate Charge @ Vgs 0.1 nC @ 4.5 V, 1.5 nC @ 4.5 V | ||
Minimum Operating Temperature -55 °C | ||
Height 0.6mm | ||
- COO (Country of Origin):
- MY
Dual N/P-Channel MOSFET, ON Semiconductor
The NTJD1155L is a dual channel MOSFET. Featuring both P and N-channel’s into a single package, this MOSFET is brilliant for low control signal, low battery voltages and high load currents. The N-channel features internal ESD protection and can be driven by logic signals as low as 1.5V, while the P-Channel is designed to be used on load switching applications. The P-channel also designed with ON semi’s trench technology.
MOSFET Transistors, ON Semiconductor