Dual N/P-Channel-Channel MOSFET, 3 A, 3.9 A, 20 V, 8-Pin ChipFET ON Semiconductor NTHC5513T1G
- RS Stock No.:
- 163-1109
- Mfr. Part No.:
- NTHC5513T1G
- Brand:
- onsemi
Unavailable
RS will no longer stock this product.
- RS Stock No.:
- 163-1109
- Mfr. Part No.:
- NTHC5513T1G
- Brand:
- onsemi
Specifications
Technical Reference
Legislation and Compliance
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | onsemi | |
| Channel Type | N, P | |
| Maximum Continuous Drain Current | 3 A, 3.9 A | |
| Maximum Drain Source Voltage | 20 V | |
| Package Type | ChipFET | |
| Mounting Type | Surface Mount | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance | 115 mΩ, 240 mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Threshold Voltage | 1.2V | |
| Maximum Power Dissipation | 2.1 W | |
| Transistor Configuration | Isolated | |
| Maximum Gate Source Voltage | -12 V, +12 V | |
| Length | 3.1mm | |
| Transistor Material | Si | |
| Width | 1.7mm | |
| Number of Elements per Chip | 2 | |
| Typical Gate Charge @ Vgs | 2.6 nC @ 4.5 V, 3 nC @ 4.5 V | |
| Maximum Operating Temperature | +150 °C | |
| Minimum Operating Temperature | -55 °C | |
| Height | 1.1mm | |
| Select all | ||
|---|---|---|
Brand onsemi | ||
Channel Type N, P | ||
Maximum Continuous Drain Current 3 A, 3.9 A | ||
Maximum Drain Source Voltage 20 V | ||
Package Type ChipFET | ||
Mounting Type Surface Mount | ||
Pin Count 8 | ||
Maximum Drain Source Resistance 115 mΩ, 240 mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 1.2V | ||
Maximum Power Dissipation 2.1 W | ||
Transistor Configuration Isolated | ||
Maximum Gate Source Voltage -12 V, +12 V | ||
Length 3.1mm | ||
Transistor Material Si | ||
Width 1.7mm | ||
Number of Elements per Chip 2 | ||
Typical Gate Charge @ Vgs 2.6 nC @ 4.5 V, 3 nC @ 4.5 V | ||
Maximum Operating Temperature +150 °C | ||
Minimum Operating Temperature -55 °C | ||
Height 1.1mm | ||
- COO (Country of Origin):
- MY