P-Channel MOSFET, 1.6 A, 30 V, 3-Pin CPH3 onsemi CPH3360-TL-W
- RS Stock No.:
- 162-9948
- Mfr. Part No.:
- CPH3360-TL-W
- Brand:
- ON Semiconductor
Subtotal (1 reel of 3000 units)*
£72.00
(exc. VAT)
£87.00
(inc. VAT)
Stock information currently inaccessible - Please check back later
Units | Per unit | Per Reel* |
|---|---|---|
| 3000 + | £0.024 | £72.00 |
*price indicative
- RS Stock No.:
- 162-9948
- Mfr. Part No.:
- CPH3360-TL-W
- Brand:
- ON Semiconductor
Specifications
Technical Reference
Legislation and Compliance
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | ON Semiconductor | |
| Channel Type | P | |
| Maximum Continuous Drain Current | 1.6 A | |
| Maximum Drain Source Voltage | 30 V | |
| Package Type | CPH3 | |
| Mounting Type | Surface Mount | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance | 617 mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Threshold Voltage | 2.6V | |
| Minimum Gate Threshold Voltage | 1.2V | |
| Maximum Power Dissipation | 900 mW | |
| Transistor Configuration | Single | |
| Maximum Gate Source Voltage | -20 V, +20 V | |
| Number of Elements per Chip | 1 | |
| Maximum Operating Temperature | +150 °C | |
| Length | 2.9mm | |
| Transistor Material | Si | |
| Width | 1.6mm | |
| Typical Gate Charge @ Vgs | 2.2 nC @ 10 V | |
| Priced to Clear | Yes | |
| Forward Diode Voltage | 1.5V | |
| Height | 0.9mm | |
| Select all | ||
|---|---|---|
Brand ON Semiconductor | ||
Channel Type P | ||
Maximum Continuous Drain Current 1.6 A | ||
Maximum Drain Source Voltage 30 V | ||
Package Type CPH3 | ||
Mounting Type Surface Mount | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 617 mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 2.6V | ||
Minimum Gate Threshold Voltage 1.2V | ||
Maximum Power Dissipation 900 mW | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage -20 V, +20 V | ||
Number of Elements per Chip 1 | ||
Maximum Operating Temperature +150 °C | ||
Length 2.9mm | ||
Transistor Material Si | ||
Width 1.6mm | ||
Typical Gate Charge @ Vgs 2.2 nC @ 10 V | ||
Priced to Clear Yes | ||
Forward Diode Voltage 1.5V | ||
Height 0.9mm | ||
- COO (Country of Origin):
- CN