Texas Instruments NexFET N-Channel MOSFET, 100 A, 25 V, 8-Pin VSON-CLIP CSD16321Q5
- RS Stock No.:
- 162-8526
- Mfr. Part No.:
- CSD16321Q5
- Brand:
- Texas Instruments
Subtotal (1 reel of 2500 units)*
£1,695.00
(exc. VAT)
£2,035.00
(inc. VAT)
FREE delivery for orders over £50.00
Temporarily out of stock
- Shipping from 19 December 2025
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Reel* |
|---|---|---|
| 2500 + | £0.678 | £1,695.00 |
*price indicative
- RS Stock No.:
- 162-8526
- Mfr. Part No.:
- CSD16321Q5
- Brand:
- Texas Instruments
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Texas Instruments | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 100 A | |
| Maximum Drain Source Voltage | 25 V | |
| Package Type | VSON-CLIP | |
| Series | NexFET | |
| Mounting Type | Surface Mount | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance | 3.8 mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Threshold Voltage | 1.4V | |
| Minimum Gate Threshold Voltage | 0.9V | |
| Maximum Power Dissipation | 3.1 W | |
| Transistor Configuration | Single | |
| Maximum Gate Source Voltage | -8 V, +10 V | |
| Maximum Operating Temperature | +150 °C | |
| Transistor Material | Si | |
| Width | 5.1mm | |
| Length | 6.1mm | |
| Number of Elements per Chip | 1 | |
| Typical Gate Charge @ Vgs | 14 nC @ 4.5 V | |
| Minimum Operating Temperature | -55 °C | |
| Height | 1.05mm | |
Select all | ||
|---|---|---|
Brand Texas Instruments | ||
Channel Type N | ||
Maximum Continuous Drain Current 100 A | ||
Maximum Drain Source Voltage 25 V | ||
Package Type VSON-CLIP | ||
Series NexFET | ||
Mounting Type Surface Mount | ||
Pin Count 8 | ||
Maximum Drain Source Resistance 3.8 mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 1.4V | ||
Minimum Gate Threshold Voltage 0.9V | ||
Maximum Power Dissipation 3.1 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage -8 V, +10 V | ||
Maximum Operating Temperature +150 °C | ||
Transistor Material Si | ||
Width 5.1mm | ||
Length 6.1mm | ||
Number of Elements per Chip 1 | ||
Typical Gate Charge @ Vgs 14 nC @ 4.5 V | ||
Minimum Operating Temperature -55 °C | ||
Height 1.05mm | ||
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