N-Channel MOSFET, 14.6 A, 30 V, 8-Pin SO International Rectifier IRF7809AVTRPBF

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Specifications

Technical Reference

Legislation and Compliance

Product Details

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Select all	Attribute	Value
	Brand	Infineon
	Channel Type	N
	Maximum Continuous Drain Current	14.6 A
	Maximum Drain Source Voltage	30 V
	Package Type	SO
	Mounting Type	Surface Mount
	Pin Count	8
	Maximum Drain Source Resistance	9 mΩ
	Channel Mode	Enhancement
	Minimum Gate Threshold Voltage	1V
	Maximum Power Dissipation	2.5 W
	Transistor Configuration	Single
	Maximum Gate Source Voltage	±12 V
	Width	4mm
	Maximum Operating Temperature	+150 °C
	Number of Elements per Chip	1
	Length	5mm
	Typical Gate Charge @ Vgs	41 nC @ 5 V
	Height	1.5mm
	Series	IRF7809AV
	Forward Diode Voltage	1.3V
	Minimum Operating Temperature	-55 °C

	Select all
	Brand Infineon
	Channel Type N
	Maximum Continuous Drain Current 14.6 A
	Maximum Drain Source Voltage 30 V
	Package Type SO
	Mounting Type Surface Mount
	Pin Count 8
	Maximum Drain Source Resistance 9 mΩ
	Channel Mode Enhancement
	Minimum Gate Threshold Voltage 1V
	Maximum Power Dissipation 2.5 W
	Transistor Configuration Single
	Maximum Gate Source Voltage ±12 V
	Width 4mm
	Maximum Operating Temperature +150 °C
	Number of Elements per Chip 1
	Length 5mm
	Typical Gate Charge @ Vgs 41 nC @ 5 V
	Height 1.5mm
	Series IRF7809AV
	Forward Diode Voltage 1.3V
	Minimum Operating Temperature -55 °C

RoHS Status: Not Applicable

30V Single N-Channel HEXFET Power MOSFET in a SO-8 package

Industry-standard pinout SO-8 Package
Compatible with Existing Surface Mount Techniques
Halogen-Free

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