N-Channel MOSFET, 17 A, 55 V, 2 + Tab-Pin D2PAK Infineon AUIRFZ24NSTRL

View all MOSFETs
Unavailable
RS will no longer stock this product.
Packaging Options:
RS Stock No.:
162-3300
Mfr. Part No.:
AUIRFZ24NSTRL
Brand:
Infineon
Find similar products by selecting one or more attributes.
Select all

Brand

Infineon

Channel Type

N

Maximum Continuous Drain Current

17 A

Maximum Drain Source Voltage

55 V

Package Type

D2PAK

Mounting Type

Surface Mount

Pin Count

2 + Tab

Maximum Drain Source Resistance

70 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4V

Minimum Gate Threshold Voltage

2V

Maximum Power Dissipation

45 W

Transistor Configuration

Single

Maximum Gate Source Voltage

±20 V

Typical Gate Charge @ Vgs

20 nC @ 10 V

Number of Elements per Chip

1

Length

10.67mm

Maximum Operating Temperature

+175 °C

Width

9.65mm

Automotive Standard

AEC-Q101

Series

AUIRFZ24N

Forward Diode Voltage

1.3V

Minimum Operating Temperature

-55 °C

Height

4.83mm

Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating. These features combine to make this design an extremely efficient and reliable device for use in Automotive applications and a wide variety of other applications

Advanced Planar Technology
Low On-Resistance
Dynamic dV/dT and dI/dT capability
175°C Operating Temperature
Fast Switching
Repetitive Avalanche Allowed up to Tjmax
Lead-Free
Target Applications:Lighting