Infineon IRF9410 N-Channel MOSFET, 7 A, 30 V, 8-Pin SO-8 IRF9410TRPBF

RS Stock No.:: 162-3278
Mfr. Part No.:: IRF9410TRPBF
Brand:: Infineon

Infineon IRF9410 N-Channel MOSFET, 7 A, 30 V, 8-Pin SO-8 IRF9410TRPBF

Subtotal (1 reel of 4000 units)*

£524.00

(exc. VAT)

£628.00

(inc. VAT)

Stock information currently inaccessible - Please check back later

Units	Per unit	Per Reel*
4000 +	£0.131	£524.00

*price indicative

RS Stock No.:: 162-3278
Mfr. Part No.:: IRF9410TRPBF
Brand:: Infineon

Specifications

Technical Reference

Legislation and Compliance

Product Details

Find similar products by selecting one or more attributes.

Select all	Attribute	Value
	Brand	Infineon
	Channel Type	N
	Maximum Continuous Drain Current	7 A
	Maximum Drain Source Voltage	30 V
	Series	IRF9410
	Package Type	SO-8
	Mounting Type	Surface Mount
	Pin Count	8
	Maximum Drain Source Resistance	50 mΩ
	Channel Mode	Enhancement
	Minimum Gate Threshold Voltage	1V
	Maximum Power Dissipation	2.5 W
	Transistor Configuration	Single
	Maximum Gate Source Voltage	±20 V
	Number of Elements per Chip	1
	Length	5mm
	Maximum Operating Temperature	+150 °C
	Typical Gate Charge @ Vgs	18 nC @ 10 V
	Width	4mm
	Height	1.5mm
	Forward Diode Voltage	1V
	Minimum Operating Temperature	-55 °C

	Select all
	Brand Infineon
	Channel Type N
	Maximum Continuous Drain Current 7 A
	Maximum Drain Source Voltage 30 V
	Series IRF9410
	Package Type SO-8
	Mounting Type Surface Mount
	Pin Count 8
	Maximum Drain Source Resistance 50 mΩ
	Channel Mode Enhancement
	Minimum Gate Threshold Voltage 1V
	Maximum Power Dissipation 2.5 W
	Transistor Configuration Single
	Maximum Gate Source Voltage ±20 V
	Number of Elements per Chip 1
	Length 5mm
	Maximum Operating Temperature +150 °C
	Typical Gate Charge @ Vgs 18 nC @ 10 V
	Width 4mm
	Height 1.5mm
	Forward Diode Voltage 1V
	Minimum Operating Temperature -55 °C

Non Compliant

Fifth Generation HEXFETS from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. this benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. the SO-8 has been modified through a customized leadframe for enhanced thermal characteristics and multiple-die capability making it ideal in a variety of power application. with these improvements, multiple devices can be used in an application with dramatically reduce board space. the package is designed for vapor phase, infra red, or wave soldering techniques.

Low RDS(on)
Industry-leading quality
Dynamic dv/dt Rating
Fast Switching
175°C Operating Temperature