Infineon IRF9410 N-Channel MOSFET, 7 A, 30 V, 8-Pin SO-8 IRF9410TRPBF
- RS Stock No.:
- 162-3278
- Mfr. Part No.:
- IRF9410TRPBF
- Brand:
- Infineon
Stock information currently inaccessible
- RS Stock No.:
- 162-3278
- Mfr. Part No.:
- IRF9410TRPBF
- Brand:
- Infineon
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 7 A | |
| Maximum Drain Source Voltage | 30 V | |
| Package Type | SO-8 | |
| Series | IRF9410 | |
| Mounting Type | Surface Mount | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance | 50 mΩ | |
| Channel Mode | Enhancement | |
| Minimum Gate Threshold Voltage | 1V | |
| Maximum Power Dissipation | 2.5 W | |
| Transistor Configuration | Single | |
| Maximum Gate Source Voltage | ±20 V | |
| Maximum Operating Temperature | +150 °C | |
| Typical Gate Charge @ Vgs | 18 nC @ 10 V | |
| Width | 4mm | |
| Number of Elements per Chip | 1 | |
| Length | 5mm | |
| Height | 1.5mm | |
| Minimum Operating Temperature | -55 °C | |
| Forward Diode Voltage | 1V | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type N | ||
Maximum Continuous Drain Current 7 A | ||
Maximum Drain Source Voltage 30 V | ||
Package Type SO-8 | ||
Series IRF9410 | ||
Mounting Type Surface Mount | ||
Pin Count 8 | ||
Maximum Drain Source Resistance 50 mΩ | ||
Channel Mode Enhancement | ||
Minimum Gate Threshold Voltage 1V | ||
Maximum Power Dissipation 2.5 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage ±20 V | ||
Maximum Operating Temperature +150 °C | ||
Typical Gate Charge @ Vgs 18 nC @ 10 V | ||
Width 4mm | ||
Number of Elements per Chip 1 | ||
Length 5mm | ||
Height 1.5mm | ||
Minimum Operating Temperature -55 °C | ||
Forward Diode Voltage 1V | ||
Non Compliant
N-Channel Power MOSFET 30V, Infineon
The Infineon range of discrete HEXFET® power MOSFETs includes N-channel devices in surface mount and leaded packages. And form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.
Fifth Generation HEXFETS from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. this benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. the SO-8 has been modified through a customized leadframe for enhanced thermal characteristics and multiple-die capability making it ideal in a variety of power application. with these improvements, multiple devices can be used in an application with dramatically reduce board space. the package is designed for vapor phase, infra red, or wave soldering techniques.
Low RDS(on)
Industry-leading quality
Dynamic dv/dt Rating
Fast Switching
175°C Operating Temperature
Industry-leading quality
Dynamic dv/dt Rating
Fast Switching
175°C Operating Temperature
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
