Specifications

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Legislation and Compliance

Product Details

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Select all	Attribute	Value
	Brand	Nexperia
	Channel Type	P
	Maximum Continuous Drain Current	-0.17 A
	Maximum Drain Source Voltage	-50 V
	Package Type	SOT-666
	Mounting Type	Surface Mount
	Pin Count	6
	Maximum Drain Source Resistance	13.5 Ω
	Channel Mode	Enhancement
	Maximum Gate Threshold Voltage	-2.1V
	Minimum Gate Threshold Voltage	-1.1V
	Maximum Power Dissipation	1.09 W
	Maximum Gate Source Voltage	20 V
	Width	1.3mm
	Length	1.7mm
	Number of Elements per Chip	1
	Typical Gate Charge @ Vgs	0.26 nC @ 2.5 V
	Maximum Operating Temperature	+150 °C
	Automotive Standard	AEC-Q101
	Minimum Operating Temperature	-55 °C
	Height	0.6mm

	Select all
	Brand Nexperia
	Channel Type P
	Maximum Continuous Drain Current -0.17 A
	Maximum Drain Source Voltage -50 V
	Package Type SOT-666
	Mounting Type Surface Mount
	Pin Count 6
	Maximum Drain Source Resistance 13.5 Ω
	Channel Mode Enhancement
	Maximum Gate Threshold Voltage -2.1V
	Minimum Gate Threshold Voltage -1.1V
	Maximum Power Dissipation 1.09 W
	Maximum Gate Source Voltage 20 V
	Width 1.3mm
	Length 1.7mm
	Number of Elements per Chip 1
	Typical Gate Charge @ Vgs 0.26 nC @ 2.5 V
	Maximum Operating Temperature +150 °C
	Automotive Standard AEC-Q101
	Minimum Operating Temperature -55 °C
	Height 0.6mm

50 V, 170 mA dual P-channel Trench MOSFET, Dual P-channel enhancement mode Field-Effect Transistor (FET) in an ultra small and flat lead SOT666 Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.

Logic-level compatible
Very fast switching
Trench MOSFET technology
ESD protection up to 1 kV
AEC-Q101 qualified
Relay driver
High-speed line driver
High-side loadswitch
Switching circuits

Nexperia P-Channel MOSFET, -0.17 A, -50 V, 6-Pin SOT-666 BSS84AKV,115