Nexperia P-Channel MOSFET, -0.17 A, -50 V, 6-Pin SOT-666 BSS84AKV,115

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Packaging Options:
RS Stock No.:
153-2880
Mfr. Part No.:
BSS84AKV,115
Brand:
Nexperia
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Brand

Nexperia

Channel Type

P

Maximum Continuous Drain Current

-0.17 A

Maximum Drain Source Voltage

-50 V

Package Type

SOT-666

Mounting Type

Surface Mount

Pin Count

6

Maximum Drain Source Resistance

13.5 Ω

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

-2.1V

Minimum Gate Threshold Voltage

-1.1V

Maximum Power Dissipation

1.09 W

Maximum Gate Source Voltage

20 V

Number of Elements per Chip

1

Maximum Operating Temperature

+150 °C

Width

1.3mm

Length

1.7mm

Typical Gate Charge @ Vgs

0.26 nC @ 2.5 V

Height

0.6mm

Automotive Standard

AEC-Q101

Minimum Operating Temperature

-55 °C

50 V, 170 mA dual P-channel Trench MOSFET, Dual P-channel enhancement mode Field-Effect Transistor (FET) in an ultra small and flat lead SOT666 Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.

Logic-level compatible
Very fast switching
Trench MOSFET technology
ESD protection up to 1 kV
AEC-Q101 qualified
Relay driver
High-speed line driver
High-side loadswitch
Switching circuits

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