Nexperia N-Channel MOSFET, 20.7 A, 75 V, 4 + Tab-Pin LFPAK BUK9Y58-75B,115
- RS Stock No.:
- 153-2876
- Mfr. Part No.:
- BUK9Y58-75B,115
- Brand:
- Nexperia
Unavailable
RS will no longer stock this product.
- RS Stock No.:
- 153-2876
- Mfr. Part No.:
- BUK9Y58-75B,115
- Brand:
- Nexperia
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Nexperia | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 20.7 A | |
| Maximum Drain Source Voltage | 75 V | |
| Package Type | LFPAK | |
| Mounting Type | Surface Mount | |
| Pin Count | 4 + Tab | |
| Maximum Drain Source Resistance | 145 mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Threshold Voltage | 2.45V | |
| Minimum Gate Threshold Voltage | 0.5V | |
| Maximum Power Dissipation | 60.4 W | |
| Transistor Configuration | Single | |
| Maximum Gate Source Voltage | 15 V | |
| Number of Elements per Chip | 1 | |
| Width | 4.1mm | |
| Typical Gate Charge @ Vgs | 10.7 nC @ 10 V | |
| Maximum Operating Temperature | +175 °C | |
| Length | 5mm | |
| Height | 1.05mm | |
| Automotive Standard | AEC-Q101 | |
| Minimum Operating Temperature | -55 °C | |
| Select all | ||
|---|---|---|
Brand Nexperia | ||
Channel Type N | ||
Maximum Continuous Drain Current 20.7 A | ||
Maximum Drain Source Voltage 75 V | ||
Package Type LFPAK | ||
Mounting Type Surface Mount | ||
Pin Count 4 + Tab | ||
Maximum Drain Source Resistance 145 mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 2.45V | ||
Minimum Gate Threshold Voltage 0.5V | ||
Maximum Power Dissipation 60.4 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage 15 V | ||
Number of Elements per Chip 1 | ||
Width 4.1mm | ||
Typical Gate Charge @ Vgs 10.7 nC @ 10 V | ||
Maximum Operating Temperature +175 °C | ||
Length 5mm | ||
Height 1.05mm | ||
Automotive Standard AEC-Q101 | ||
Minimum Operating Temperature -55 °C | ||
N-channel TrenchMOS logic level FET, Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications.
Low conduction losses due to low on-state resistance
Q101 compliant
Suitable for logic level gate drive sources
Suitable for thermally demanding environments due to 175 °C rating
12 V, 24 V and 42 V loads
Automotive systems
DC-to-DC converters
General purpose power switching
solenoid drives
Q101 compliant
Suitable for logic level gate drive sources
Suitable for thermally demanding environments due to 175 °C rating
12 V, 24 V and 42 V loads
Automotive systems
DC-to-DC converters
General purpose power switching
solenoid drives