Nexperia Hex N/P-Channel MOSFET, 600 mA, 20 V, 8-Pin DFN1010B-6, SOT1216 PMCXB900UELZ
- RS Stock No.:
- 153-1972
- Mfr. Part No.:
- PMCXB900UELZ
- Brand:
- Nexperia
Stock information currently inaccessible
- RS Stock No.:
- 153-1972
- Mfr. Part No.:
- PMCXB900UELZ
- Brand:
- Nexperia
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Nexperia | |
| Channel Type | N, P | |
| Maximum Continuous Drain Current | 600 mA | |
| Maximum Drain Source Voltage | 20 V | |
| Package Type | DFN1010B-6, SOT1216 | |
| Mounting Type | Surface Mount | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance | 3 Ω | |
| Channel Mode | Enhancement | |
| Maximum Gate Threshold Voltage | 0.95V | |
| Minimum Gate Threshold Voltage | 0.45V | |
| Maximum Power Dissipation | 4025 mW | |
| Maximum Gate Source Voltage | 8 V | |
| Typical Gate Charge @ Vgs | 0.4 nC @ 10 V | |
| Length | 1.15mm | |
| Width | 1.05mm | |
| Number of Elements per Chip | 6 | |
| Maximum Operating Temperature | +150 °C | |
| Height | 0.36mm | |
| Minimum Operating Temperature | -55 °C | |
| Select all | ||
|---|---|---|
Brand Nexperia | ||
Channel Type N, P | ||
Maximum Continuous Drain Current 600 mA | ||
Maximum Drain Source Voltage 20 V | ||
Package Type DFN1010B-6, SOT1216 | ||
Mounting Type Surface Mount | ||
Pin Count 8 | ||
Maximum Drain Source Resistance 3 Ω | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 0.95V | ||
Minimum Gate Threshold Voltage 0.45V | ||
Maximum Power Dissipation 4025 mW | ||
Maximum Gate Source Voltage 8 V | ||
Typical Gate Charge @ Vgs 0.4 nC @ 10 V | ||
Length 1.15mm | ||
Width 1.05mm | ||
Number of Elements per Chip 6 | ||
Maximum Operating Temperature +150 °C | ||
Height 0.36mm | ||
Minimum Operating Temperature -55 °C | ||
N/P-channel dual MOSFETs, Efficient performance, efficient design, With N- and P-channel MOSFETs combined in one convenient package, these complementary MOSFET devices offer you lots of flexibility in space-critical systems. Our range covers several voltage and current ratings, satisfying the requirements of a variety of applications.
20 V, complementary N/P-channel Trench MOSFET, Complementary N/P-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN1010B-6 (SOT1216) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
Low leakage current
Trench MOSFET technology
Very low threshold voltage for portable applications: VGS(th) = 0.7 V
Leadless ultra small and ultra thin SMD plastic package: 1.1 x 1.0 x 0.37 mm
ElectroStatic Discharge (ESD) protection > 1 kV HBM
Relay driver
High-speed line driver
Level shifter
Power management in battery-driven portables
Trench MOSFET technology
Very low threshold voltage for portable applications: VGS(th) = 0.7 V
Leadless ultra small and ultra thin SMD plastic package: 1.1 x 1.0 x 0.37 mm
ElectroStatic Discharge (ESD) protection > 1 kV HBM
Relay driver
High-speed line driver
Level shifter
Power management in battery-driven portables