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Select all	Attribute	Value
	Brand	Nexperia
	Channel Type	N, P
	Maximum Continuous Drain Current	600 mA
	Maximum Drain Source Voltage	20 V
	Package Type	DFN1010B-6, SOT1216
	Mounting Type	Surface Mount
	Pin Count	8
	Maximum Drain Source Resistance	3 Ω
	Channel Mode	Enhancement
	Maximum Gate Threshold Voltage	0.95V
	Minimum Gate Threshold Voltage	0.45V
	Maximum Power Dissipation	4025 mW
	Maximum Gate Source Voltage	8 V
	Number of Elements per Chip	6
	Maximum Operating Temperature	+150 °C
	Typical Gate Charge @ Vgs	0.4 nC @ 10 V
	Length	1.15mm
	Width	1.05mm
	Minimum Operating Temperature	-55 °C
	Height	0.36mm

	Select all
	Brand Nexperia
	Channel Type N, P
	Maximum Continuous Drain Current 600 mA
	Maximum Drain Source Voltage 20 V
	Package Type DFN1010B-6, SOT1216
	Mounting Type Surface Mount
	Pin Count 8
	Maximum Drain Source Resistance 3 Ω
	Channel Mode Enhancement
	Maximum Gate Threshold Voltage 0.95V
	Minimum Gate Threshold Voltage 0.45V
	Maximum Power Dissipation 4025 mW
	Maximum Gate Source Voltage 8 V
	Number of Elements per Chip 6
	Maximum Operating Temperature +150 °C
	Typical Gate Charge @ Vgs 0.4 nC @ 10 V
	Length 1.15mm
	Width 1.05mm
	Minimum Operating Temperature -55 °C
	Height 0.36mm

N/P-channel dual MOSFETs, Efficient performance, efficient design, With N- and P-channel MOSFETs combined in one convenient package, these complementary MOSFET devices offer you lots of flexibility in space-critical systems. Our range covers several voltage and current ratings, satisfying the requirements of a variety of applications.

20 V, complementary N/P-channel Trench MOSFET, Complementary N/P-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN1010B-6 (SOT1216) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.

Low leakage current
Trench MOSFET technology
Very low threshold voltage for portable applications: VGS(th) = 0.7 V
Leadless ultra small and ultra thin SMD plastic package: 1.1 x 1.0 x 0.37 mm
ElectroStatic Discharge (ESD) protection > 1 kV HBM
Relay driver
High-speed line driver
Level shifter
Power management in battery-driven portables

Nexperia Hex N/P-Channel MOSFET, 600 mA, 20 V, 8-Pin DFN1010B-6, SOT1216 PMCXB900UELZ