Nexperia Hex P-Channel MOSFET, -410 mA, -30 V, 8-Pin DFN1010B-6, SOT1216 PMDXB1200UPEZ

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Packaging Options:
RS Stock No.:
153-1962
Mfr. Part No.:
PMDXB1200UPEZ
Brand:
Nexperia
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Brand

Nexperia

Channel Type

P

Maximum Continuous Drain Current

-410 mA

Maximum Drain Source Voltage

-30 V

Package Type

DFN1010B-6, SOT1216

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

5.1 Ω

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

-0.95V

Minimum Gate Threshold Voltage

-0.45V

Maximum Power Dissipation

4030 mW

Maximum Gate Source Voltage

8 V

Length

1.15mm

Maximum Operating Temperature

+150 °C

Width

1.05mm

Number of Elements per Chip

6

Typical Gate Charge @ Vgs

0.7 nC @ 4.5 V

Minimum Operating Temperature

-55 °C

Height

0.36mm

P-channel MOSFETs, The perfect fit for your design when N-channels simply aren’t suitable, Our extensive MOSFET catalog also includes many P-channel device families, based on Nexperia’s leading Trench technology. Rated from 12 V to 70 V and housed in low- and medium-power packages, they offer our familiar blend of high efficiency and high reliability.

30 V, dual P-channel Trench MOSFET, Dual P-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN1010B-6 (SOT1216) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.

Low threshold voltage
Leadless ultra small and ultra thin SMD plastic package 1.1 x 1.0 x 0.37 mm
Trench MOSFET technology
ElectroStatic Discharge (ESD) protection > 2 kV HBM
Relay driver
High-speed line driver
High-side loadswitch
Switching circuits