Nexperia Dual P-Channel MOSFET, 500 mA, -20 V, 8-Pin DFN1010B-6 PMDXB950UPEZ
- RS Stock No.:
- 153-1956
- Mfr. Part No.:
- PMDXB950UPEZ
- Brand:
- Nexperia
Stock information currently inaccessible
- RS Stock No.:
- 153-1956
- Mfr. Part No.:
- PMDXB950UPEZ
- Brand:
- Nexperia
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Nexperia | |
| Channel Type | P | |
| Maximum Continuous Drain Current | 500 mA | |
| Maximum Drain Source Voltage | -20 V | |
| Package Type | DFN1010B-6 | |
| Mounting Type | Surface Mount | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance | 3.5 Ω | |
| Channel Mode | Enhancement | |
| Maximum Gate Threshold Voltage | -0.95V | |
| Minimum Gate Threshold Voltage | -0.45V | |
| Maximum Power Dissipation | 4025 mW | |
| Maximum Gate Source Voltage | 8 V | |
| Maximum Operating Temperature | +150 °C | |
| Width | 1.05mm | |
| Length | 1.15mm | |
| Number of Elements per Chip | 2 | |
| Typical Gate Charge @ Vgs | 1.19 nC @ 10 V | |
| Height | 0.36mm | |
| Minimum Operating Temperature | -55 °C | |
| Select all | ||
|---|---|---|
Brand Nexperia | ||
Channel Type P | ||
Maximum Continuous Drain Current 500 mA | ||
Maximum Drain Source Voltage -20 V | ||
Package Type DFN1010B-6 | ||
Mounting Type Surface Mount | ||
Pin Count 8 | ||
Maximum Drain Source Resistance 3.5 Ω | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage -0.95V | ||
Minimum Gate Threshold Voltage -0.45V | ||
Maximum Power Dissipation 4025 mW | ||
Maximum Gate Source Voltage 8 V | ||
Maximum Operating Temperature +150 °C | ||
Width 1.05mm | ||
Length 1.15mm | ||
Number of Elements per Chip 2 | ||
Typical Gate Charge @ Vgs 1.19 nC @ 10 V | ||
Height 0.36mm | ||
Minimum Operating Temperature -55 °C | ||
P-channel MOSFETs, The perfect fit for your design when N-channels simply aren’t suitable, Our extensive MOSFET catalog also includes many P-channel device families, based on Nexperia’s leading Trench technology. Rated from 12 V to 70 V and housed in low- and medium-power packages, they offer our familiar blend of high efficiency and high reliability.
20 V, dual P-channel Trench MOSFET, Dual P-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN1010B-6 (SOT1216) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
Trench MOSFET technology
Leadless ultra small and ultra thin SMD plastic package: 1.1 x 1.0 x 0.37 mm
Exposed drain pad for excellent thermal conduction
ElectroStatic Discharge (ESD) protection > 1 kV HBM
Drain-source on-state resistance RDSon = 1.02 Ω
Relay driver
High-speed line driver
High-side load switch
Switching circuits
Leadless ultra small and ultra thin SMD plastic package: 1.1 x 1.0 x 0.37 mm
Exposed drain pad for excellent thermal conduction
ElectroStatic Discharge (ESD) protection > 1 kV HBM
Drain-source on-state resistance RDSon = 1.02 Ω
Relay driver
High-speed line driver
High-side load switch
Switching circuits