Nexperia P-Channel MOSFET, 2.9 A, 20 V, 4-Pin DFN1010D-3, SOT1215 PMXB75UPEZ
- RS Stock No.:
- 153-1936P
- Mfr. Part No.:
- PMXB75UPEZ
- Brand:
- Nexperia
Bulk discount available
Subtotal 250 units (supplied on a reel)*
£21.00
(exc. VAT)
£25.25
(inc. VAT)
FREE delivery for orders over £50.00
Temporarily out of stock
- 4,950 unit(s) shipping from 11 May 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit |
|---|---|
| 250 - 1200 | £0.084 |
| 1250 - 2450 | £0.067 |
| 2500 - 3700 | £0.065 |
| 3750 + | £0.064 |
*price indicative
- RS Stock No.:
- 153-1936P
- Mfr. Part No.:
- PMXB75UPEZ
- Brand:
- Nexperia
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Nexperia | |
| Channel Type | P | |
| Maximum Continuous Drain Current | 2.9 A | |
| Maximum Drain Source Voltage | 20 V | |
| Package Type | DFN1010D-3, SOT1215 | |
| Mounting Type | Surface Mount | |
| Pin Count | 4 | |
| Maximum Drain Source Resistance | 950 mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Threshold Voltage | -1V | |
| Minimum Gate Threshold Voltage | -0.4V | |
| Maximum Power Dissipation | 8330 mW | |
| Transistor Configuration | Single | |
| Maximum Gate Source Voltage | 8 V | |
| Maximum Operating Temperature | +150 °C | |
| Typical Gate Charge @ Vgs | 6.8 nC @ 10 V | |
| Width | 1.05mm | |
| Length | 1.15mm | |
| Number of Elements per Chip | 1 | |
| Height | 0.36mm | |
| Minimum Operating Temperature | -55 °C | |
| Select all | ||
|---|---|---|
Brand Nexperia | ||
Channel Type P | ||
Maximum Continuous Drain Current 2.9 A | ||
Maximum Drain Source Voltage 20 V | ||
Package Type DFN1010D-3, SOT1215 | ||
Mounting Type Surface Mount | ||
Pin Count 4 | ||
Maximum Drain Source Resistance 950 mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage -1V | ||
Minimum Gate Threshold Voltage -0.4V | ||
Maximum Power Dissipation 8330 mW | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage 8 V | ||
Maximum Operating Temperature +150 °C | ||
Typical Gate Charge @ Vgs 6.8 nC @ 10 V | ||
Width 1.05mm | ||
Length 1.15mm | ||
Number of Elements per Chip 1 | ||
Height 0.36mm | ||
Minimum Operating Temperature -55 °C | ||
20 V, P-channel Trench MOSFET, P-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN1010D-3 (SOT1215) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
Trench MOSFET technology
Leadless ultra small and ultra thin SMD plastic package: 1.1 x 1.0 x 0.37 mm
Exposed drain pad for excellent thermal conduction
ElectroStatic Discharge (ESD) protection 1.5 kV HBM
Drain-source on-state resistance RDSon = 69 mΩ
Very low gate-source threshold voltage for portable applications VGS(th) = -0.68 V
High-side load switch and charging switch for portable devices
Power management in battery driven portables
LED driver
DC-to-DC converter
Leadless ultra small and ultra thin SMD plastic package: 1.1 x 1.0 x 0.37 mm
Exposed drain pad for excellent thermal conduction
ElectroStatic Discharge (ESD) protection 1.5 kV HBM
Drain-source on-state resistance RDSon = 69 mΩ
Very low gate-source threshold voltage for portable applications VGS(th) = -0.68 V
High-side load switch and charging switch for portable devices
Power management in battery driven portables
LED driver
DC-to-DC converter