Nexperia Hex N-Channel MOSFET, 600 mA, 20 V, 8-Pin DFN1010B-6, SOT1216 PMDXB600UNELZ
- RS Stock No.:
- 153-0749
- Mfr. Part No.:
- PMDXB600UNELZ
- Brand:
- Nexperia
Stock information currently inaccessible
- RS Stock No.:
- 153-0749
- Mfr. Part No.:
- PMDXB600UNELZ
- Brand:
- Nexperia
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Nexperia | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 600 mA | |
| Maximum Drain Source Voltage | 20 V | |
| Package Type | DFN1010B-6, SOT1216 | |
| Mounting Type | Surface Mount | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance | 3 Ω | |
| Channel Mode | Enhancement | |
| Maximum Gate Threshold Voltage | 0.95V | |
| Minimum Gate Threshold Voltage | 0.45V | |
| Maximum Power Dissipation | 4025 mW | |
| Maximum Gate Source Voltage | 8 V | |
| Maximum Operating Temperature | +150 °C | |
| Typical Gate Charge @ Vgs | 0.4 nC @ 10 V | |
| Width | 1.05mm | |
| Length | 1.15mm | |
| Number of Elements per Chip | 6 | |
| Height | 0.36mm | |
| Minimum Operating Temperature | -55 °C | |
| Select all | ||
|---|---|---|
Brand Nexperia | ||
Channel Type N | ||
Maximum Continuous Drain Current 600 mA | ||
Maximum Drain Source Voltage 20 V | ||
Package Type DFN1010B-6, SOT1216 | ||
Mounting Type Surface Mount | ||
Pin Count 8 | ||
Maximum Drain Source Resistance 3 Ω | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 0.95V | ||
Minimum Gate Threshold Voltage 0.45V | ||
Maximum Power Dissipation 4025 mW | ||
Maximum Gate Source Voltage 8 V | ||
Maximum Operating Temperature +150 °C | ||
Typical Gate Charge @ Vgs 0.4 nC @ 10 V | ||
Width 1.05mm | ||
Length 1.15mm | ||
Number of Elements per Chip 6 | ||
Height 0.36mm | ||
Minimum Operating Temperature -55 °C | ||
N-channel MOSFETs ≤ 20 V, Get the optimum switching solutions for your portable designs, Choose from a wide range of single and dual N-channel MOSFETs up to 20 V. Great reliability due to our trusted TrenchMOS and package technologies. Easy-to-use, our low voltage MOSFETs are designed specifically to meet the demands of portable applications with low drive voltages.
20 V, dual N-channel Trench MOSFET, Dual N-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN1010B-6 (SOT1216) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
Low leakage current
Leadless ultra small and ultra thin SMD plastic package: 1.1 x 1.0 x 0.37 mm
Exposed drain pad for excellent thermal conduction
ElectroStatic Discharge (ESD) protection > 1 kV HBM
Drain-source on-state resistance RDSon = 470 mΩ
Relay driver
High-speed line driver
Low-side load switch
Switching circuits
Leadless ultra small and ultra thin SMD plastic package: 1.1 x 1.0 x 0.37 mm
Exposed drain pad for excellent thermal conduction
ElectroStatic Discharge (ESD) protection > 1 kV HBM
Drain-source on-state resistance RDSon = 470 mΩ
Relay driver
High-speed line driver
Low-side load switch
Switching circuits