Vishay P-Channel MOSFET, 2.8 A, 60 V, 3-Pin SOT-23 SQ2361ES-T1_GE3
- RS Stock No.:
- 152-6376P
- Mfr. Part No.:
- SQ2361ES-T1_GE3
- Brand:
- Vishay
Subtotal 25 units (supplied on a continuous strip)*
£9.425
(exc. VAT)
£11.30
(inc. VAT)
FREE delivery for orders over £50.00
Last RS stock
- Final 32,975 unit(s), ready to ship
Units | Per unit |
|---|---|
| 25 + | £0.377 |
*price indicative
- RS Stock No.:
- 152-6376P
- Mfr. Part No.:
- SQ2361ES-T1_GE3
- Brand:
- Vishay
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Vishay | |
| Channel Type | P | |
| Maximum Continuous Drain Current | 2.8 A | |
| Maximum Drain Source Voltage | 60 V | |
| Package Type | SOT-23 | |
| Mounting Type | Surface Mount | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance | 320 mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Threshold Voltage | -2.5V | |
| Minimum Gate Threshold Voltage | -1.5V | |
| Maximum Power Dissipation | 2 W | |
| Transistor Configuration | Single | |
| Maximum Gate Source Voltage | 20 V | |
| Width | 1.4mm | |
| Number of Elements per Chip | 1 | |
| Length | 3.04mm | |
| Maximum Operating Temperature | +175 °C | |
| Typical Gate Charge @ Vgs | 9 nC @ 10 V | |
| Minimum Operating Temperature | -55 °C | |
| Height | 1.02mm | |
| Automotive Standard | AEC-Q101 | |
| Forward Diode Voltage | -1.2V | |
Select all | ||
|---|---|---|
Brand Vishay | ||
Channel Type P | ||
Maximum Continuous Drain Current 2.8 A | ||
Maximum Drain Source Voltage 60 V | ||
Package Type SOT-23 | ||
Mounting Type Surface Mount | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 320 mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage -2.5V | ||
Minimum Gate Threshold Voltage -1.5V | ||
Maximum Power Dissipation 2 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage 20 V | ||
Width 1.4mm | ||
Number of Elements per Chip 1 | ||
Length 3.04mm | ||
Maximum Operating Temperature +175 °C | ||
Typical Gate Charge @ Vgs 9 nC @ 10 V | ||
Minimum Operating Temperature -55 °C | ||
Height 1.02mm | ||
Automotive Standard AEC-Q101 | ||
Forward Diode Voltage -1.2V | ||
TrenchFET® power MOSFET
Material categorization
Material categorization