Nexperia N-Channel MOSFET, 120 A, 40 V, 3 + Tab-Pin D2PAK BUK761R7-40E,118

Unavailable
RS will no longer stock this product.
Packaging Options:
RS Stock No.:
152-5533
Mfr. Part No.:
BUK761R7-40E,118
Brand:
Nexperia
Find similar products by selecting one or more attributes.
Select all

Brand

Nexperia

Channel Type

N

Maximum Continuous Drain Current

120 A

Maximum Drain Source Voltage

40 V

Package Type

D2PAK

Mounting Type

Surface Mount

Pin Count

3 + Tab

Maximum Drain Source Resistance

3 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4.5V

Minimum Gate Threshold Voltage

1V

Maximum Power Dissipation

324 W

Transistor Configuration

Single

Maximum Gate Source Voltage

20 V

Maximum Operating Temperature

+175 °C

Number of Elements per Chip

1

Typical Gate Charge @ Vgs

118 nC @ 10 V

Width

9.4mm

Length

10.3mm

Height

4.5mm

Automotive Standard

AEC-Q101

Minimum Operating Temperature

-55 °C

N-channel TrenchMOS standard level FET, Standard level N-channel MOSFET in a SOT404A package using TrenchMOS technology. This product has been designed and qualified to AEC Q101 standard for use in high performance automotive applications.

AEC Q101 compliant
Repetitive avalanche rated
Suitable for thermally demanding environments due to 175 °C rating
True standard level gate with VGS(th) rating of greater than 1 V at 175 °C
12 V Automotive systems
Electric and electro-hydraulic power steering
Motors, lamps and solenoid control
Start-Stop micro-hybrid applications
Transmission control
Ultra high performance power switching