Nexperia 3 N-Channel MOSFET, 1.1 A, 80 V, 4-Pin DFN1010D-3, SOT1215 PMXB360ENEAZ
- RS Stock No.:
- 151-3135
- Mfr. Part No.:
- PMXB360ENEAZ
- Brand:
- Nexperia
Stock information currently inaccessible
- RS Stock No.:
- 151-3135
- Mfr. Part No.:
- PMXB360ENEAZ
- Brand:
- Nexperia
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Nexperia | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 1.1 A | |
| Maximum Drain Source Voltage | 80 V | |
| Package Type | DFN1010D-3, SOT1215 | |
| Mounting Type | Surface Mount | |
| Pin Count | 4 | |
| Maximum Drain Source Resistance | 887 mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Threshold Voltage | 2.7V | |
| Minimum Gate Threshold Voltage | 1.3V | |
| Maximum Power Dissipation | 6250 mW | |
| Transistor Configuration | Single | |
| Maximum Gate Source Voltage | 20 V | |
| Number of Elements per Chip | 3 | |
| Width | 1.05mm | |
| Length | 1.15mm | |
| Maximum Operating Temperature | +150 °C | |
| Typical Gate Charge @ Vgs | 3 nC @ 10 V | |
| Automotive Standard | AEC-Q101 | |
| Height | 0.4mm | |
| Minimum Operating Temperature | -55 °C | |
| Select all | ||
|---|---|---|
Brand Nexperia | ||
Channel Type N | ||
Maximum Continuous Drain Current 1.1 A | ||
Maximum Drain Source Voltage 80 V | ||
Package Type DFN1010D-3, SOT1215 | ||
Mounting Type Surface Mount | ||
Pin Count 4 | ||
Maximum Drain Source Resistance 887 mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 2.7V | ||
Minimum Gate Threshold Voltage 1.3V | ||
Maximum Power Dissipation 6250 mW | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage 20 V | ||
Number of Elements per Chip 3 | ||
Width 1.05mm | ||
Length 1.15mm | ||
Maximum Operating Temperature +150 °C | ||
Typical Gate Charge @ Vgs 3 nC @ 10 V | ||
Automotive Standard AEC-Q101 | ||
Height 0.4mm | ||
Minimum Operating Temperature -55 °C | ||
80 V, N-channel Trench MOSFET, N-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN1010D-3 (SOT1215) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
Logic-level compatible
Leadless ultra small and ultra thin SMD plastic package: 1.1 x 1.0 x 0.37 mm
Tin-plated 100 % solderable side pads for optical solder inspection
ElectroStatic Discharge (ESD) protection > 2 kV HBM
AEC-Q101 qualified
Leadless ultra small and ultra thin SMD plastic package: 1.1 x 1.0 x 0.37 mm
Tin-plated 100 % solderable side pads for optical solder inspection
ElectroStatic Discharge (ESD) protection > 2 kV HBM
AEC-Q101 qualified