Nexperia N-Channel MOSFET, 5 A, 12 V, 4-Pin WLCSP PMCM440VNEZ
- RS Stock No.:
- 151-3037
- Mfr. Part No.:
- PMCM440VNEZ
- Brand:
- Nexperia
Unavailable
RS will no longer stock this product.
- RS Stock No.:
- 151-3037
- Mfr. Part No.:
- PMCM440VNEZ
- Brand:
- Nexperia
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Nexperia | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 5 A | |
| Maximum Drain Source Voltage | 12 V | |
| Package Type | WLCSP | |
| Mounting Type | Surface Mount | |
| Pin Count | 4 | |
| Maximum Drain Source Resistance | 130 mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Threshold Voltage | 0.9V | |
| Minimum Gate Threshold Voltage | 0.4V | |
| Maximum Power Dissipation | 12500 mW | |
| Transistor Configuration | Single | |
| Maximum Gate Source Voltage | 8 V | |
| Maximum Operating Temperature | +150 °C | |
| Typical Gate Charge @ Vgs | 5.5 nC @ 10 V | |
| Width | 0.75mm | |
| Length | 0.75mm | |
| Number of Elements per Chip | 1 | |
| Minimum Operating Temperature | -55 °C | |
| Height | 0.315mm | |
| Select all | ||
|---|---|---|
Brand Nexperia | ||
Channel Type N | ||
Maximum Continuous Drain Current 5 A | ||
Maximum Drain Source Voltage 12 V | ||
Package Type WLCSP | ||
Mounting Type Surface Mount | ||
Pin Count 4 | ||
Maximum Drain Source Resistance 130 mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 0.9V | ||
Minimum Gate Threshold Voltage 0.4V | ||
Maximum Power Dissipation 12500 mW | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage 8 V | ||
Maximum Operating Temperature +150 °C | ||
Typical Gate Charge @ Vgs 5.5 nC @ 10 V | ||
Width 0.75mm | ||
Length 0.75mm | ||
Number of Elements per Chip 1 | ||
Minimum Operating Temperature -55 °C | ||
Height 0.315mm | ||
N-channel MOSFETs ≤ 20 V, Get the optimum switching solutions for your portable designs, Choose from a wide range of single and dual N-channel MOSFETs up to 20 V. Great reliability due to our trusted TrenchMOS and package technologies. Easy-to-use, our low voltage MOSFETs are designed specifically to meet the demands of portable applications with low drive voltages.
12 V, N-channel Trench MOSFET, N-channel enhancement mode Field-Effect Transistor (FET) in a 4 bumps Wafer Level Chip-Size Package (WLCSP) using Trench MOSFET technology.
Low threshold voltage
Ultra small package: 0.78 x 0.78 x 0.35 mm
Trench MOSFET technology
ElectroStatic Discharge (ESD) protection > 2 kV HBM
Ultra small package: 0.78 x 0.78 x 0.35 mm
Trench MOSFET technology
ElectroStatic Discharge (ESD) protection > 2 kV HBM
