ROHM SiC N-Channel MOSFET, 4 A, 1700 V, 3-Pin TO-268 SCT2H12NYTB

Brand

ROHM

Channel Type

N

Maximum Continuous Drain Current

4 A

Maximum Drain Source Voltage

1700 V

Package Type

TO-268

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

1.71 Ω

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4V

Minimum Gate Threshold Voltage

1.6V

Maximum Power Dissipation

44 W

Transistor Configuration

Single

Maximum Gate Source Voltage

22 V

Transistor Material

SiC

Typical Gate Charge @ Vgs

14 nC @ 18 V

Length

15.95mm

Width

13.9mm

Number of Elements per Chip

1

Maximum Operating Temperature

+175 °C

Height

5mm

Forward Diode Voltage

4.3V