ROHM SiC N-Channel MOSFET, 5.9 A, 1700 V, 2 + Tab-Pin TO-268 SCT2750NYTB

Brand

ROHM

Channel Type

N

Maximum Continuous Drain Current

5.9 A

Maximum Drain Source Voltage

1700 V

Package Type

TO-268

Mounting Type

Surface Mount

Pin Count

2 + Tab

Maximum Drain Source Resistance

1.088 Ω

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4V

Minimum Gate Threshold Voltage

1.6V

Maximum Power Dissipation

57 W

Transistor Configuration

Single

Maximum Gate Source Voltage

22 V

Length

15.95mm

Number of Elements per Chip

1

Transistor Material

SiC

Maximum Operating Temperature

+175 °C

Width

13.9mm

Typical Gate Charge @ Vgs

17 nC @ 18 V

Height

5mm