ROHM SiC N-Channel MOSFET, 30 A, 650 V, 3-Pin TO-247N SCT3080ALGC11
- RS Stock No.:
- 148-6947
- Mfr. Part No.:
- SCT3080ALGC11
- Brand:
- ROHM
Stock information currently inaccessible
- RS Stock No.:
- 148-6947
- Mfr. Part No.:
- SCT3080ALGC11
- Brand:
- ROHM
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | ROHM | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 30 A | |
| Maximum Drain Source Voltage | 650 V | |
| Package Type | TO-247N | |
| Mounting Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance | 105.6 mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Threshold Voltage | 5.6V | |
| Minimum Gate Threshold Voltage | 2.7V | |
| Maximum Power Dissipation | 165 W | |
| Transistor Configuration | Single | |
| Maximum Gate Source Voltage | 22 V | |
| Number of Elements per Chip | 1 | |
| Transistor Material | SiC | |
| Width | 5mm | |
| Length | 16mm | |
| Typical Gate Charge @ Vgs | 48 nC @ 18 V | |
| Maximum Operating Temperature | +175 °C | |
| Height | 21mm | |
| Select all | ||
|---|---|---|
Brand ROHM | ||
Channel Type N | ||
Maximum Continuous Drain Current 30 A | ||
Maximum Drain Source Voltage 650 V | ||
Package Type TO-247N | ||
Mounting Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 105.6 mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 5.6V | ||
Minimum Gate Threshold Voltage 2.7V | ||
Maximum Power Dissipation 165 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage 22 V | ||
Number of Elements per Chip 1 | ||
Transistor Material SiC | ||
Width 5mm | ||
Length 16mm | ||
Typical Gate Charge @ Vgs 48 nC @ 18 V | ||
Maximum Operating Temperature +175 °C | ||
Height 21mm | ||
Low on-resistance Fast switching speed Fast reverse recovery Easy to parallel Simple to drive Pb-free lead plating, RoHS compliant