N-Channel MOSFET, 3.5 A, 850 V, 2 + Tab-Pin D2PAK IXYS IXFA4N85X

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RS Stock No.:
146-4407
Mfr. Part No.:
IXFA4N85X
Brand:
IXYS
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Brand

IXYS

Channel Type

N

Maximum Continuous Drain Current

3.5 A

Maximum Drain Source Voltage

850 V

Package Type

D2PAK (TO-263)

Mounting Type

Surface Mount

Pin Count

2 + Tab

Maximum Drain Source Resistance

2.5 Ω

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

5.5V

Minimum Gate Threshold Voltage

3.5V

Maximum Power Dissipation

150 W

Transistor Configuration

Single

Maximum Gate Source Voltage

±30 V

Typical Gate Charge @ Vgs

7 @ 10 V nC

Maximum Operating Temperature

+150 °C

Width

10.92mm

Length

10.41mm

Number of Elements per Chip

1

Series

HiperFET

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

1.4V

Height

4.7mm

Priced to Clear

Yes

The 850V Ultra-Junction X-Class Power MOSFETs with fast body diodes represent a new power semiconductor product line from IXYS Corporation. These rugged devices display the lowest on-state resistances in the industry, enabling very high power density in high-voltage power conversion applications. Developed using the charge compensation principle and proprietary process technology, the new 850V devices exhibit the lowest on-state resistances (33 milliohm in the SOT-227 package and 41 milliohm in the PLUS264, for instance), along with low gate charges and superior dv/dt performance.

Ultra low on-resistance RDS(ON) and gate charge Qg
Fast body diode
dv/dt ruggedness
Avalanche rated
Low package inductance
International standard packages