N-Channel MOSFET, 3.5 A, 850 V, 2 + Tab-Pin D2PAK IXYS IXFA4N85X
- RS Stock No.:
- 146-4407
- Mfr. Part No.:
- IXFA4N85X
- Brand:
- IXYS
Subtotal (1 pack of 5 units)*
£2.20
(exc. VAT)
£2.65
(inc. VAT)
Stock information currently inaccessible - Please check back later
Units | Per unit | Per Pack* |
|---|---|---|
| 5 + | £0.44 | £2.20 |
*price indicative
- RS Stock No.:
- 146-4407
- Mfr. Part No.:
- IXFA4N85X
- Brand:
- IXYS
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | IXYS | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 3.5 A | |
| Maximum Drain Source Voltage | 850 V | |
| Package Type | D2PAK (TO-263) | |
| Mounting Type | Surface Mount | |
| Pin Count | 2 + Tab | |
| Maximum Drain Source Resistance | 2.5 Ω | |
| Channel Mode | Enhancement | |
| Maximum Gate Threshold Voltage | 5.5V | |
| Minimum Gate Threshold Voltage | 3.5V | |
| Maximum Power Dissipation | 150 W | |
| Transistor Configuration | Single | |
| Maximum Gate Source Voltage | ±30 V | |
| Number of Elements per Chip | 1 | |
| Typical Gate Charge @ Vgs | 7 @ 10 V nC | |
| Length | 10.41mm | |
| Width | 10.92mm | |
| Maximum Operating Temperature | +150 °C | |
| Forward Diode Voltage | 1.4V | |
| Height | 4.7mm | |
| Priced to Clear | Yes | |
| Series | HiperFET | |
| Minimum Operating Temperature | -55 °C | |
| Select all | ||
|---|---|---|
Brand IXYS | ||
Channel Type N | ||
Maximum Continuous Drain Current 3.5 A | ||
Maximum Drain Source Voltage 850 V | ||
Package Type D2PAK (TO-263) | ||
Mounting Type Surface Mount | ||
Pin Count 2 + Tab | ||
Maximum Drain Source Resistance 2.5 Ω | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 5.5V | ||
Minimum Gate Threshold Voltage 3.5V | ||
Maximum Power Dissipation 150 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage ±30 V | ||
Number of Elements per Chip 1 | ||
Typical Gate Charge @ Vgs 7 @ 10 V nC | ||
Length 10.41mm | ||
Width 10.92mm | ||
Maximum Operating Temperature +150 °C | ||
Forward Diode Voltage 1.4V | ||
Height 4.7mm | ||
Priced to Clear Yes | ||
Series HiperFET | ||
Minimum Operating Temperature -55 °C | ||
The 850V Ultra-Junction X-Class Power MOSFETs with fast body diodes represent a new power semiconductor product line from IXYS Corporation. These rugged devices display the lowest on-state resistances in the industry, enabling very high power density in high-voltage power conversion applications. Developed using the charge compensation principle and proprietary process technology, the new 850V devices exhibit the lowest on-state resistances (33 milliohm in the SOT-227 package and 41 milliohm in the PLUS264, for instance), along with low gate charges and superior dv/dt performance.
Ultra low on-resistance RDS(ON) and gate charge Qg
Fast body diode
dv/dt ruggedness
Avalanche rated
Low package inductance
International standard packages
Fast body diode
dv/dt ruggedness
Avalanche rated
Low package inductance
International standard packages