N-Channel MOSFET, 150 A, 650 V, 3-Pin PLUS264 IXYS IXFB150N65X2

Unavailable
RS will no longer stock this product.
RS Stock No.:
146-4401
Mfr. Part No.:
IXFB150N65X2
Brand:
IXYS
Find similar products by selecting one or more attributes.
Select all

Brand

IXYS

Channel Type

N

Maximum Continuous Drain Current

150 A

Maximum Drain Source Voltage

650 V

Package Type

PLUS264

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

17 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

5V

Minimum Gate Threshold Voltage

3.5V

Maximum Power Dissipation

1.56 kW

Transistor Configuration

Single

Maximum Gate Source Voltage

±30 V

Number of Elements per Chip

1

Length

20.26mm

Typical Gate Charge @ Vgs

355 nC @ 10 V nC

Maximum Operating Temperature

+150 °C

Width

5.31mm

Forward Diode Voltage

1.4V

Height

26.59mm

Minimum Operating Temperature

-55 °C

Series

HiperFET

Low RDS(ON) and Qg
Fast body diode
dv/dt ruggedness
Avalanche rated
Low package inductance
International standard packages
Resonant mode power supplies
High intensity discharge (HID) lamp ballast
AC and DC motor drives
DC-DC converters
Robotic and servo control
Battery chargers
3-level solar inverters
LED lighting
Unmanned Aerial Vehicles (UAVs)
Higher efficiency
High power density
Easy to mount
Space savings