IXYS HiperFET N-Channel MOSFET, 80 A, 650 V, 3-Pin TO-247 IXFH80N65X2-4

Stock information currently inaccessible
RS Stock No.:
146-4385
Mfr. Part No.:
IXFH80N65X2-4
Brand:
IXYS
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Brand

IXYS

Channel Type

N

Maximum Continuous Drain Current

80 A

Maximum Drain Source Voltage

650 V

Package Type

TO-247

Series

HiperFET

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

38 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

5V

Minimum Gate Threshold Voltage

3.5V

Maximum Power Dissipation

890 W

Transistor Configuration

Single

Maximum Gate Source Voltage

±30 V

Number of Elements per Chip

1

Width

5.21mm

Typical Gate Charge @ Vgs

140 @ 10 V nC

Length

16.13mm

Maximum Operating Temperature

+150 °C

Height

21.34mm

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

1.4V

Low RDS(ON) and Qg
Fast body diode
dv/dt ruggedness
Avalanche rated
Low package inductance
International standard packages
Resonant mode power supplies
High intensity discharge (HID) lamp ballast
AC and DC motor drives
DC-DC converters
Robotic and servo control
Battery chargers
3-level solar inverters
LED lighting
Unmanned Aerial Vehicles (UAVs)
Higher efficiency
High power density
Easy to mount
Space savings

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