IXYS HiperFET N-Channel MOSFET, 120 A, 650 V, 3-Pin TO-264P IXFK120N65X2

Unavailable
RS will no longer stock this product.
RS Stock No.:
146-4238
Mfr. Part No.:
IXFK120N65X2
Brand:
IXYS
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Brand

IXYS

Channel Type

N

Maximum Continuous Drain Current

120 A

Maximum Drain Source Voltage

650 V

Series

HiperFET

Package Type

TO-264P

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

24 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

5V

Minimum Gate Threshold Voltage

3.5V

Maximum Power Dissipation

1.25 kW

Transistor Configuration

Single

Maximum Gate Source Voltage

±30 V

Width

5.3mm

Typical Gate Charge @ Vgs

240 @ 10 V nC

Number of Elements per Chip

1

Maximum Operating Temperature

+150 °C

Length

20.3mm

Minimum Operating Temperature

-55 °C

Height

26.3mm

Forward Diode Voltage

1.4V