IXYS HiperFET N-Channel MOSFET, 120 A, 650 V, 3-Pin TO-264P IXFK120N65X2

Unavailable
RS will no longer stock this product.
RS Stock No.:
146-4238
Mfr. Part No.:
IXFK120N65X2
Brand:
IXYS
Find similar products by selecting one or more attributes.
Select all

Brand

IXYS

Channel Type

N

Maximum Continuous Drain Current

120 A

Maximum Drain Source Voltage

650 V

Package Type

TO-264P

Series

HiperFET

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

24 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

5V

Minimum Gate Threshold Voltage

3.5V

Maximum Power Dissipation

1.25 kW

Transistor Configuration

Single

Maximum Gate Source Voltage

±30 V

Width

5.3mm

Typical Gate Charge @ Vgs

240 @ 10 V nC

Length

20.3mm

Number of Elements per Chip

1

Maximum Operating Temperature

+150 °C

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

1.4V

Height

26.3mm