Dual N-Channel MOSFET, 19 A, 650 V, 3-Pin TO220F onsemi FCPF165N65S3

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Select all	Attribute	Value
	Brand	ON Semiconductor
	Channel Type	N
	Maximum Continuous Drain Current	19 A
	Maximum Drain Source Voltage	650 V
	Package Type	TO220F
	Mounting Type	Through Hole
	Pin Count	3
	Maximum Drain Source Resistance	165 mΩ
	Channel Mode	Enhancement
	Maximum Gate Threshold Voltage	4.5V
	Minimum Gate Threshold Voltage	2.5V
	Maximum Power Dissipation	35 W
	Transistor Configuration	Single
	Maximum Gate Source Voltage	±30 V ac/dc
	Width	4.6mm
	Maximum Operating Temperature	+150 °C
	Length	10.3mm
	Typical Gate Charge @ Vgs	35 nC @ 10 V
	Number of Elements per Chip	2
	Forward Diode Voltage	1.2V
	Series	SuperFET III
	Minimum Operating Temperature	-55 °C
	Height	15.7mm

	Select all
	Brand ON Semiconductor
	Channel Type N
	Maximum Continuous Drain Current 19 A
	Maximum Drain Source Voltage 650 V
	Package Type TO220F
	Mounting Type Through Hole
	Pin Count 3
	Maximum Drain Source Resistance 165 mΩ
	Channel Mode Enhancement
	Maximum Gate Threshold Voltage 4.5V
	Minimum Gate Threshold Voltage 2.5V
	Maximum Power Dissipation 35 W
	Transistor Configuration Single
	Maximum Gate Source Voltage ±30 V ac/dc
	Width 4.6mm
	Maximum Operating Temperature +150 °C
	Length 10.3mm
	Typical Gate Charge @ Vgs 35 nC @ 10 V
	Number of Elements per Chip 2
	Forward Diode Voltage 1.2V
	Series SuperFET III
	Minimum Operating Temperature -55 °C
	Height 15.7mm

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