Dual N-Channel MOSFET, 211 A, 30 V, 8-Pin PQFN onsemi FDMS1D4N03
- RS Stock No.:
- 146-3376
- Mfr. Part No.:
- FDMS1D4N03S
- Brand:
- ON Semiconductor
Stock information currently inaccessible
- RS Stock No.:
- 146-3376
- Mfr. Part No.:
- FDMS1D4N03S
- Brand:
- ON Semiconductor
Specifications
Technical Reference
Legislation and Compliance
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | ON Semiconductor | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 211 A | |
| Maximum Drain Source Voltage | 30 V | |
| Package Type | PQFN | |
| Mounting Type | Surface Mount | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance | 1.09 mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Threshold Voltage | 3V | |
| Minimum Gate Threshold Voltage | 1V | |
| Maximum Power Dissipation | 74 W | |
| Transistor Configuration | Single | |
| Maximum Gate Source Voltage | ±16 V | |
| Number of Elements per Chip | 2 | |
| Width | 5.85mm | |
| Length | 5mm | |
| Typical Gate Charge @ Vgs | 102 nC @ 10 V | |
| Maximum Operating Temperature | +150 °C | |
| Height | 1.05mm | |
| Forward Diode Voltage | 1.3V | |
| Series | PowerTrench | |
| Minimum Operating Temperature | -55 °C | |
| Select all | ||
|---|---|---|
Brand ON Semiconductor | ||
Channel Type N | ||
Maximum Continuous Drain Current 211 A | ||
Maximum Drain Source Voltage 30 V | ||
Package Type PQFN | ||
Mounting Type Surface Mount | ||
Pin Count 8 | ||
Maximum Drain Source Resistance 1.09 mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 3V | ||
Minimum Gate Threshold Voltage 1V | ||
Maximum Power Dissipation 74 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage ±16 V | ||
Number of Elements per Chip 2 | ||
Width 5.85mm | ||
Length 5mm | ||
Typical Gate Charge @ Vgs 102 nC @ 10 V | ||
Maximum Operating Temperature +150 °C | ||
Height 1.05mm | ||
Forward Diode Voltage 1.3V | ||
Series PowerTrench | ||
Minimum Operating Temperature -55 °C | ||