The IXYS X2 class Power MOSFET series offers significantly reduced on resistance and gate charge when compared to earlier generations of power MOSFETs resulting in reduced losses and higher operational efficiency. These rugged devices incorporate an intrinsic diode and are suitable for both hard switching and resonant mode applications. X2 class Power MOSFETs are available in a variety of industry-standard packages including isolated types, with ratings of up to 120A at 650V. Typical applications include DC-DC converters, AC and DC motor drives, switch-mode and resonant-mode power supplies, DC Choppers, Solar inverters, temperature and lighting control.
Very low RDS(on) and QG (gate charge) Intrinsic rectifier diode Low intrinsic gate resistance Low package inductance Industry standard packages
MOSFET Transistors, IXYS
A wide range of advanced discrete Power MOSFET devices from IXYS
Attribute
Value
Channel Type
N
Maximum Continuous Drain Current
2 A
Maximum Drain Source Voltage
650 V
Package Type
TO-220
Series
X2-Class
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
2.3 Ω
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
5V
Minimum Gate Threshold Voltage
3V
Maximum Power Dissipation
55 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-30 V, +30 V
Transistor Material
Si
Maximum Operating Temperature
+150 °C
Length
10.3mm
Number of Elements per Chip
1
Typical Gate Charge @ Vgs
4.3 nC @ 10 V
Width
15.9mm
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.4V
Height
4.7mm
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