N-Channel MOSFET, 34 A, 500 V, 3-Pin TO-3PN IXYS IXFQ34N50P3
- RS Stock No.:
- 146-1753
- Mfr. Part No.:
- IXFQ34N50P3
- Brand:
- IXYS
Available to back order for despatch 17/04/2025
Added
Price Each (In a Tube of 30)
£6.143
(exc. VAT)
£7.372
(inc. VAT)
| Units | Per unit | Per Tube* |
| 30 - 30 | £6.143 | £184.29 |
| 60 - 120 | £5.836 | £175.08 |
| 150 + | £5.528 | £165.84 |
| *price indicative | ||
- RS Stock No.:
- 146-1753
- Mfr. Part No.:
- IXFQ34N50P3
- Brand:
- IXYS
Legislation and Compliance
- COO (Country of Origin):
- US
Product Details
N-channel Power MOSFET, IXYS HiperFET™ Polar3™ Series
A range of IXYS Polar3™ series N-channel Power MOSFETs with Fast Intrinsic Diode (HiPerFET™)
MOSFET Transistors, IXYS
A wide range of advanced discrete Power MOSFET devices from IXYS
Specifications
Attribute | Value |
|---|---|
| Channel Type | N |
| Maximum Continuous Drain Current | 34 A |
| Maximum Drain Source Voltage | 500 V |
| Package Type | TO-3PN |
| Series | HiperFET, Polar3 |
| Mounting Type | Through Hole |
| Pin Count | 3 |
| Maximum Drain Source Resistance | 175 mΩ |
| Channel Mode | Enhancement |
| Maximum Gate Threshold Voltage | 5V |
| Maximum Power Dissipation | 695 W |
| Transistor Configuration | Single |
| Maximum Gate Source Voltage | -30 V, +30 V |
| Maximum Operating Temperature | +150 °C |
| Number of Elements per Chip | 1 |
| Width | 4.9mm |
| Typical Gate Charge @ Vgs | 60 nC @ 10 V |
| Transistor Material | Si |
| Length | 15.8mm |
| Height | 20.3mm |
| Minimum Operating Temperature | -55 °C |