MPN

Diodes Inc N-Channel MOSFET, 5.8 A, 100 V, 8-Pin PowerDI3333-8 DMN10H099SFG-7

Subtotal (1 reel of 2000 units)*

£438.00

(exc. VAT)

£526.00

(inc. VAT)

Temporarily out of stock

Need more? Click ‘Check delivery dates’ to find extra stock and lead times.

Units	Per unit	Per Reel*
2000 +	£0.219	£438.00

*price indicative

Find similar products by selecting one or more attributes.

Select all	Attribute	Value
	Brand	DiodesZetex
	Channel Type	N
	Maximum Continuous Drain Current	5.8 A
	Maximum Drain Source Voltage	100 V
	Package Type	PowerDI3333-8
	Mounting Type	Surface Mount
	Pin Count	8
	Maximum Drain Source Resistance	99 mΩ
	Channel Mode	Enhancement
	Maximum Gate Threshold Voltage	3V
	Minimum Gate Threshold Voltage	1.5V
	Maximum Power Dissipation	2.31 W
	Transistor Configuration	Single
	Maximum Gate Source Voltage	-20 V, +20 V
	Typical Gate Charge @ Vgs	25.2 nC @ 10 V
	Maximum Operating Temperature	+150 °C
	Number of Elements per Chip	1
	Transistor Material	Si
	Width	3.35mm
	Length	3.35mm
	Height	0.8mm
	Forward Diode Voltage	0.77V
	Minimum Operating Temperature	-55 °C

	Select all
	Brand DiodesZetex
	Channel Type N
	Maximum Continuous Drain Current 5.8 A
	Maximum Drain Source Voltage 100 V
	Package Type PowerDI3333-8
	Mounting Type Surface Mount
	Pin Count 8
	Maximum Drain Source Resistance 99 mΩ
	Channel Mode Enhancement
	Maximum Gate Threshold Voltage 3V
	Minimum Gate Threshold Voltage 1.5V
	Maximum Power Dissipation 2.31 W
	Transistor Configuration Single
	Maximum Gate Source Voltage -20 V, +20 V
	Typical Gate Charge @ Vgs 25.2 nC @ 10 V
	Maximum Operating Temperature +150 °C
	Number of Elements per Chip 1
	Transistor Material Si
	Width 3.35mm
	Length 3.35mm
	Height 0.8mm
	Forward Diode Voltage 0.77V
	Minimum Operating Temperature -55 °C

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