N-Channel MOSFET, 161 A, 30 V, 3-Pin IPAK Infineon IRLU7843PBF

Unavailable
RS will no longer stock this product.
RS Stock No.:
145-9680
Mfr. Part No.:
IRLU7843PBF
Brand:
Infineon
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Brand

Infineon

Channel Type

N

Maximum Continuous Drain Current

161 A

Maximum Drain Source Voltage

30 V

Package Type

IPAK (TO-251)

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

3.3 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2.3V

Minimum Gate Threshold Voltage

1.4V

Maximum Power Dissipation

140 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Width

2.39mm

Number of Elements per Chip

1

Typical Gate Charge @ Vgs

34 nC @ 4.5 V

Length

6.73mm

Maximum Operating Temperature

+175 °C

Transistor Material

Si

Series

HEXFET

Height

7.49mm

Minimum Operating Temperature

-55 °C

COO (Country of Origin):
CN

N-Channel Power MOSFET 30V, Infineon


The Infineon range of discrete HEXFET® power MOSFETs includes N-channel devices in surface mount and leaded packages. And form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.


MOSFET Transistors, Infineon


Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.