N-Channel MOSFET, 161 A, 30 V, 3-Pin IPAK Infineon IRLU7843PBF

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We don’t know if this item will be back in stock, it is being discontinued by the manufacturer.
RS Stock No.:
145-9680
Mfr. Part No.:
IRLU7843PBF
Brand:
Infineon
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Brand

Infineon

Channel Type

N

Maximum Continuous Drain Current

161 A

Maximum Drain Source Voltage

30 V

Package Type

IPAK (TO-251)

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

3.3 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2.3V

Minimum Gate Threshold Voltage

1.4V

Maximum Power Dissipation

140 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Typical Gate Charge @ Vgs

34 nC @ 4.5 V

Length

6.73mm

Transistor Material

Si

Width

2.39mm

Maximum Operating Temperature

+175 °C

Number of Elements per Chip

1

Series

HEXFET

Minimum Operating Temperature

-55 °C

Height

7.49mm

COO (Country of Origin):
CN

N-Channel Power MOSFET 30V, Infineon


The Infineon range of discrete HEXFET® power MOSFETs includes N-channel devices in surface mount and leaded packages. And form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.


MOSFET Transistors, Infineon


Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.