Infineon HEXFET N-Channel MOSFET, 92 A, 30 V, 3-Pin TO-220AB IRLB8748PBF
- RS Stock No.:
- 145-9612
- Mfr. Part No.:
- IRLB8748PBF
- Brand:
- Infineon
Bulk discount available
Subtotal (1 tube of 50 units)*
£17.35
(exc. VAT)
£20.80
(inc. VAT)
FREE delivery for orders over £50.00
Last RS stock
- Final 800 unit(s), ready to ship
Units | Per unit | Per Tube* |
|---|---|---|
| 50 - 50 | £0.347 | £17.35 |
| 100 - 200 | £0.33 | £16.50 |
| 250 - 450 | £0.297 | £14.85 |
| 500 + | £0.295 | £14.75 |
*price indicative
- RS Stock No.:
- 145-9612
- Mfr. Part No.:
- IRLB8748PBF
- Brand:
- Infineon
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 92 A | |
| Maximum Drain Source Voltage | 30 V | |
| Package Type | TO-220AB | |
| Series | HEXFET | |
| Mounting Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance | 5 mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Threshold Voltage | 2.35V | |
| Minimum Gate Threshold Voltage | 1.35V | |
| Maximum Power Dissipation | 75 W | |
| Transistor Configuration | Single | |
| Maximum Gate Source Voltage | -20 V, +20 V | |
| Length | 10.67mm | |
| Transistor Material | Si | |
| Typical Gate Charge @ Vgs | 15 nC @ 4.5 V | |
| Width | 4.83mm | |
| Maximum Operating Temperature | +175 °C | |
| Number of Elements per Chip | 1 | |
| Minimum Operating Temperature | -55 °C | |
| Height | 9.02mm | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type N | ||
Maximum Continuous Drain Current 92 A | ||
Maximum Drain Source Voltage 30 V | ||
Package Type TO-220AB | ||
Series HEXFET | ||
Mounting Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 5 mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 2.35V | ||
Minimum Gate Threshold Voltage 1.35V | ||
Maximum Power Dissipation 75 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage -20 V, +20 V | ||
Length 10.67mm | ||
Transistor Material Si | ||
Typical Gate Charge @ Vgs 15 nC @ 4.5 V | ||
Width 4.83mm | ||
Maximum Operating Temperature +175 °C | ||
Number of Elements per Chip 1 | ||
Minimum Operating Temperature -55 °C | ||
Height 9.02mm | ||
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